Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory
This paper presents a high-endurance capacitorless one-transistor (1T) cryogenic memory, fabricated in a 180 nm bulk CMOS technology, with a high memory window of (<inline-formula> <tex-math notation="LaTeX">$10{^{{7}}}~I_{1}$ </tex-math></inline-formula>/<inline...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10946245/ |
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