Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation
Due to its superior nanoscale properties, cobalt (Co) is highly desirable for ultrahigh-density 3D integration into materials through metal/dielectric hybrid bonding. However, this process is very challenging through Co/SiO _2 hybrid bonding, as very hydrophilic SiO _2 surfaces are needed for bondin...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | International Journal of Extreme Manufacturing |
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| Online Access: | https://doi.org/10.1088/2631-7990/ada834 |
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| author | Xiaoyun Qi Shicheng Zhou Yan Ma Tadatomo Suga Chenxi Wang |
| author_facet | Xiaoyun Qi Shicheng Zhou Yan Ma Tadatomo Suga Chenxi Wang |
| author_sort | Xiaoyun Qi |
| collection | DOAJ |
| description | Due to its superior nanoscale properties, cobalt (Co) is highly desirable for ultrahigh-density 3D integration into materials through metal/dielectric hybrid bonding. However, this process is very challenging through Co/SiO _2 hybrid bonding, as very hydrophilic SiO _2 surfaces are needed for bonding during dehydration reactions and oxidation of the Co surfaces must be avoided. Additionally, the substantial coefficient of thermal expansion mismatch between the robust capping layers (Co and SiO _2 layers) necessitates hybrid bonding with minimal thermal input and compression. In this study, we introduce a ternary plasma activation strategy employing an Ar/NH _3 /H _2 O gas mixture to facilitate Co/SiO _2 hybrid bonding at temperatures as low as ∼200 °C, which is markedly lower than the melting point of Co (∼1500 °C). Intriguingly, non-oxide metallization at the Co–Co interface can be realized without the hindrance of a bonding barrier, thereby reducing the electrical resistance by over 40% and compression force requirements. Moreover, the enhancement in the SiO _2 surface energy through active group terminations fosters extensive interfacial hydration and strengthens the mechanical properties. This research paves the way for fine-tuning bonding surfaces using a material-selective strategy, which should advance metal/dielectric hybrid bonding for future integration applications. |
| format | Article |
| id | doaj-art-0c595aa09f4c4a6680713edc141fa04e |
| institution | Kabale University |
| issn | 2631-7990 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | International Journal of Extreme Manufacturing |
| spelling | doaj-art-0c595aa09f4c4a6680713edc141fa04e2025-01-23T11:52:52ZengIOP PublishingInternational Journal of Extreme Manufacturing2631-79902025-01-017303510110.1088/2631-7990/ada834Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activationXiaoyun Qi0Shicheng Zhou1Yan Ma2Tadatomo Suga3Chenxi Wang4https://orcid.org/0000-0003-0576-1055State Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology , Harbin 150001, People’s Republic of ChinaDepartment of Bioengineering, The University of Tokyo , Bunkyo, Tokyo 113-8656, JapanState Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology , Harbin 150001, People’s Republic of ChinaCollaborative Research Center, Meisei University , Hino, Tokyo 191-8506, JapanState Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology , Harbin 150001, People’s Republic of ChinaDue to its superior nanoscale properties, cobalt (Co) is highly desirable for ultrahigh-density 3D integration into materials through metal/dielectric hybrid bonding. However, this process is very challenging through Co/SiO _2 hybrid bonding, as very hydrophilic SiO _2 surfaces are needed for bonding during dehydration reactions and oxidation of the Co surfaces must be avoided. Additionally, the substantial coefficient of thermal expansion mismatch between the robust capping layers (Co and SiO _2 layers) necessitates hybrid bonding with minimal thermal input and compression. In this study, we introduce a ternary plasma activation strategy employing an Ar/NH _3 /H _2 O gas mixture to facilitate Co/SiO _2 hybrid bonding at temperatures as low as ∼200 °C, which is markedly lower than the melting point of Co (∼1500 °C). Intriguingly, non-oxide metallization at the Co–Co interface can be realized without the hindrance of a bonding barrier, thereby reducing the electrical resistance by over 40% and compression force requirements. Moreover, the enhancement in the SiO _2 surface energy through active group terminations fosters extensive interfacial hydration and strengthens the mechanical properties. This research paves the way for fine-tuning bonding surfaces using a material-selective strategy, which should advance metal/dielectric hybrid bonding for future integration applications.https://doi.org/10.1088/2631-7990/ada834hybrid bondingplasma activationlow temperaturesurface characterizationbonding interface |
| spellingShingle | Xiaoyun Qi Shicheng Zhou Yan Ma Tadatomo Suga Chenxi Wang Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation International Journal of Extreme Manufacturing hybrid bonding plasma activation low temperature surface characterization bonding interface |
| title | Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation |
| title_full | Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation |
| title_fullStr | Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation |
| title_full_unstemmed | Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation |
| title_short | Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation |
| title_sort | boosting non oxide interfacial co sio2 hybrid bonding by selective surface activation |
| topic | hybrid bonding plasma activation low temperature surface characterization bonding interface |
| url | https://doi.org/10.1088/2631-7990/ada834 |
| work_keys_str_mv | AT xiaoyunqi boostingnonoxideinterfacialcosio2hybridbondingbyselectivesurfaceactivation AT shichengzhou boostingnonoxideinterfacialcosio2hybridbondingbyselectivesurfaceactivation AT yanma boostingnonoxideinterfacialcosio2hybridbondingbyselectivesurfaceactivation AT tadatomosuga boostingnonoxideinterfacialcosio2hybridbondingbyselectivesurfaceactivation AT chenxiwang boostingnonoxideinterfacialcosio2hybridbondingbyselectivesurfaceactivation |