Development of blue-light GaN based micro light-emitting diodes using ion implantation technology
Abstract This study fabricated 10 μm chip size μLEDs of blue-light GaN based epilayers structure with different mesa processes using dry etching and ion implantation technology. Two ion sources, As and Ar, were applied to implant into the LED structure to achieve material isolation and avoid defects...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2024-12-01
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| Series: | Discover Nano |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-024-04169-4 |
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