First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown t...

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Bibliographic Details
Main Authors: Bei Xu, Changjun Zhu, Xiaomin He, Yuan Zang, Shenghuang Lin, Lianbi Li, Song Feng, Qianqian Lei
Format: Article
Language:English
Published: Wiley 2018-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2018/8010351
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