Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

In this paper, the frequency (f) dependence of trap generation in Si n-channel fin field-effect transistors (n-FinFETs) under AC positive bias temperature instability (PBTI) stress is investigated by fast direct-current current-voltage (DCIV) method and the discharging-based multi-pulse energy profi...

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Bibliographic Details
Main Authors: Yunfei Shi, Hao Chang, Hong Yang, Qiangzhu Zhang, Qianqian Liu, Bo Tang, Longda Zhou, Zhigang Ji, Junjie Li, Xiaobin He, Junfeng Li, Huaxiang Yin, Xiaolei Wang, Jun Luo, Wenwu Wang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Reliability
positive bias temperature instability (PBTI)
AC
Si FinFETs
trap generation
energy distribution
Online Access:https://ieeexplore.ieee.org/document/10994476/
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