Low-Dark-Current and Wide-Dynamic-Range InGaAs/InAlAs Avalanche Photodiodes with a Dual-Charge Layer
This study explores the impact of a dual-charge layer structure on the performance of InGaAs/InAlAs avalanche photodiodes (APDs) with a separate absorption, charge, multiplication, charge, and transit (SACMCT) structure. The dual-charge layer, consisting of p-doped and n-doped charge layers on eithe...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/12/4/312 |
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