Low-Dark-Current and Wide-Dynamic-Range InGaAs/InAlAs Avalanche Photodiodes with a Dual-Charge Layer

Low-Dark-Current and Wide-Dynamic-Range InGaAs/InAlAs Avalanche Photodiodes with a Dual-Charge Layer

This study explores the impact of a dual-charge layer structure on the performance of InGaAs/InAlAs avalanche photodiodes (APDs) with a separate absorption, charge, multiplication, charge, and transit (SACMCT) structure. The dual-charge layer, consisting of p-doped and n-doped charge layers on eithe...

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Bibliographic Details
Main Authors: Guohao Yang, Tianhong Liu, Jinping Li, Cunzhu Tong
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Photonics
Subjects:
dual-charge layer
avalanche photodiodes
dark current
wide dynamic range
optical communication
Online Access:https://www.mdpi.com/2304-6732/12/4/312
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