Perspective Method of Betavoltaic Converter Creation

Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V. The cryogenic plasmochemical silicon etching process is developed, able to form the structured silicon layer...

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Bibliographic Details
Main Authors: K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin, S.V. Bogdanov, E.T. Lelekov, V.G. Sidorov, P.V. Zelenkov
Format: Article
Language:English
Published: Sumy State University 2016-06-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02022.pdf
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