Simulation and Assessment of Thermal-Stress Analysis of Welding Materials in IGBT
Insulated gate bipolar transistors (IGBTs), as an important power semiconductor device, are susceptible to thermal stress, thermal fatigue, and mechanical stresses under high-voltage, high-current, and high-power conditions. Elevated heat dissipation within the module leads to fluctuating rises in t...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/12/1519 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|