Simulation and Assessment of Thermal-Stress Analysis of Welding Materials in IGBT

Simulation and Assessment of Thermal-Stress Analysis of Welding Materials in IGBT

Insulated gate bipolar transistors (IGBTs), as an important power semiconductor device, are susceptible to thermal stress, thermal fatigue, and mechanical stresses under high-voltage, high-current, and high-power conditions. Elevated heat dissipation within the module leads to fluctuating rises in t...

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Bibliographic Details
Main Authors: Yang Yang, Jibing Chen, Bowen Liu, Yiping Wu
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
insulated gate bipolar transistors (IGBT)
thermal-stress analysis
temperature distribution
equivalent stress and strain
crack and void damage
Online Access:https://www.mdpi.com/2072-666X/15/12/1519
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