Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Abstract Metal‐oxide thin‐film transistors (TFTs) have garnered much attention because of their advantages such as high transparency, low leakage current, and low processing temperature. However, there is a need to continuously improve their mobility and bias stability for application to next‐genera...

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Bibliographic Details
Main Authors: Jun‐Su Eun, Jinuk Lee, Jeong‐Hyeon Na, Jun‐Hyeong Park, Won Park, Junhao Feng, Kyung‐Ho Seo, Jaewon Jang, In Man Kang, Do‐Kyung Kim, Jin‐Hyuk Bae
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
bilayer structure
charge transport characteristics
oxide semiconductors
positive bias stability
semiconductor thickness control
thin‐film transistors
Online Access:https://doi.org/10.1002/aelm.202400328
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https://doi.org/10.1002/aelm.202400328

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