Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication

Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication

This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at room temperature, Zn...

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Bibliographic Details
Main Authors: Alexander V. Saenko, Roman V. Tominov, Igor L. Jityaev, Zakhar E. Vakulov, Vadim I. Avilov, Nikita V. Polupanov, Vladimir A. Smirnov
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Nanomaterials
Subjects:
ZnO thin films
RF magnetron sputtering
structural properties
transparent memristor
ReRAM
resistive switching
Online Access:https://www.mdpi.com/2079-4991/14/23/1901
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