Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators
At nanometer scale device dimensions, factors that lead to integrated circuit performance variations from one instant in time to another become increasingly significant. Random Telegraph Noise (RTN) is one of the relevant time-dependent variability sources. We perform a simple, physically based anal...
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/11031463/ |
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| author | Gilson Wirth Caroline P. Garcia Guillermo L. Nogueira |
| author_facet | Gilson Wirth Caroline P. Garcia Guillermo L. Nogueira |
| author_sort | Gilson Wirth |
| collection | DOAJ |
| description | At nanometer scale device dimensions, factors that lead to integrated circuit performance variations from one instant in time to another become increasingly significant. Random Telegraph Noise (RTN) is one of the relevant time-dependent variability sources. We perform a simple, physically based analysis that illustrates the impact of RTN on CMOS ring oscillators. Time-domain jitter analysis is used to study the evolution of different jitter metrics over time. We clearly show that the observed jitter may strongly depend on the observation time window. Straightforward expressions for period jitter, cycle-to-cycle jitter and absolute jitter enable evaluation of design choices such as loading, number of stages and bias point on ring oscillator jitter performance. This is relevant not only for circuit design, but also for test and characterization procedures, because metrics such as measurement setup bandwidth and observation time window may impact the outcome of test and characterization procedures. We validate the analytical expressions through simulations and experimental data. |
| format | Article |
| id | doaj-art-073f71b75a7340e5851bef674cc4def1 |
| institution | DOAJ |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
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| series | IEEE Access |
| spelling | doaj-art-073f71b75a7340e5851bef674cc4def12025-08-20T03:23:57ZengIEEEIEEE Access2169-35362025-01-011310423310424310.1109/ACCESS.2025.357929511031463Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring OscillatorsGilson Wirth0https://orcid.org/0000-0002-4990-5113Caroline P. Garcia1https://orcid.org/0000-0003-0874-4779Guillermo L. Nogueira2https://orcid.org/0009-0008-9437-4957Department of Electrical Engineering, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Rio Grande do Sul, BrazilPGMicro, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Rio Grande do Sul, BrazilComputer Engineering Department, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Rio Grande do Sul, BrazilAt nanometer scale device dimensions, factors that lead to integrated circuit performance variations from one instant in time to another become increasingly significant. Random Telegraph Noise (RTN) is one of the relevant time-dependent variability sources. We perform a simple, physically based analysis that illustrates the impact of RTN on CMOS ring oscillators. Time-domain jitter analysis is used to study the evolution of different jitter metrics over time. We clearly show that the observed jitter may strongly depend on the observation time window. Straightforward expressions for period jitter, cycle-to-cycle jitter and absolute jitter enable evaluation of design choices such as loading, number of stages and bias point on ring oscillator jitter performance. This is relevant not only for circuit design, but also for test and characterization procedures, because metrics such as measurement setup bandwidth and observation time window may impact the outcome of test and characterization procedures. We validate the analytical expressions through simulations and experimental data.https://ieeexplore.ieee.org/document/11031463/Metal-oxide–semiconductor field-effect transistor (MOSFET)random telegraph noise (RTN)ring oscillatortiming jittertime-dependent variability |
| spellingShingle | Gilson Wirth Caroline P. Garcia Guillermo L. Nogueira Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators IEEE Access Metal-oxide–semiconductor field-effect transistor (MOSFET) random telegraph noise (RTN) ring oscillator timing jitter time-dependent variability |
| title | Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators |
| title_full | Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators |
| title_fullStr | Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators |
| title_full_unstemmed | Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators |
| title_short | Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators |
| title_sort | impact of observation time window on rtn induced jitter in cmos ring oscillators |
| topic | Metal-oxide–semiconductor field-effect transistor (MOSFET) random telegraph noise (RTN) ring oscillator timing jitter time-dependent variability |
| url | https://ieeexplore.ieee.org/document/11031463/ |
| work_keys_str_mv | AT gilsonwirth impactofobservationtimewindowonrtninducedjitterincmosringoscillators AT carolinepgarcia impactofobservationtimewindowonrtninducedjitterincmosringoscillators AT guillermolnogueira impactofobservationtimewindowonrtninducedjitterincmosringoscillators |