Impact of Observation Time Window on RTN-Induced Jitter in CMOS Ring Oscillators

At nanometer scale device dimensions, factors that lead to integrated circuit performance variations from one instant in time to another become increasingly significant. Random Telegraph Noise (RTN) is one of the relevant time-dependent variability sources. We perform a simple, physically based anal...

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Bibliographic Details
Main Authors: Gilson Wirth, Caroline P. Garcia, Guillermo L. Nogueira
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/11031463/
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