Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit
Herein, we present a novel method for junction temperature monitoring of GaN HEMT devices to achieve real-time temperature perception at different locations on the device surface. Through sputtering patterned Ti/Pt thermistor strips on the surface of a GaN HEMT device to construct an on-chip array j...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/3/304 |
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