Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit

Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit

Herein, we present a novel method for junction temperature monitoring of GaN HEMT devices to achieve real-time temperature perception at different locations on the device surface. Through sputtering patterned Ti/Pt thermistor strips on the surface of a GaN HEMT device to construct an on-chip array j...

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Bibliographic Details
Main Authors: Yukuan Chang, Yue Su, Mingke Xiao, Jiatao Wu, Xu Zhang, Hongda Chen
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Micromachines
Subjects:
GaN HEMT
junction temperature
temperature monitoring unit
thermal distribution
monitoring accuracy
Online Access:https://www.mdpi.com/2072-666X/16/3/304
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