Development of Self‐Aligned Top‐Gate Transistor Arrays on Wafer‐Scale Two‐Dimensional Semiconductor

Development of Self‐Aligned Top‐Gate Transistor Arrays on Wafer‐Scale Two‐Dimensional Semiconductor

Abstract Two‐dimensional semiconductor materials (2DSM) effectively mitigate the short‐channel effect due to their atomic thickness, offering significant advantages over traditional silicon‐based materials, particularly in short channel length. In manufacturing 2DSM top‐gate field‐effect transistors...

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Main Authors: Yuxuan Zhu, Jinshu Zhang, Hui Xie, Yin Xia, Xiangqi Dong, Saifei Gou, Zhejia Zhang, Xinliu He, Haojie Chen, Mingrui Ao, Qicheng Sun, Yan Hu, Yuchen Tian, Jieya Shang, Yufei Song, Jiahao Wang, Sen Wang, Xiaofei Yue, Chunxiao Cong, Lihui Zhou, Sheng Dai, Zihan Xu, Jing Wan, Haibing Qiu, Yin Wang, Xiaojun Tan, Wenzhong Bao
Format: Article
Language:English
Published: Wiley 2025-04-01
Series:Advanced Science
Subjects:
2D semiconductors
optimization process
self‐aligned
top‐gate
wafer‐scale
Online Access:https://doi.org/10.1002/advs.202415250
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https://doi.org/10.1002/advs.202415250

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