High-Performance Ferroelectric Capacitors Based on Pt/BaTiO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures for Nonvolatile Memory Applications

BaTiO<sub>3</sub> (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal lea...

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Bibliographic Details
Main Authors: Zengyuan Fang, Yiming Peng, Haiou Li, Xingpeng Liu, Jianghui Zhai
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/15/4/337
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