High-Performance Ferroelectric Capacitors Based on Pt/BaTiO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures for Nonvolatile Memory Applications
BaTiO<sub>3</sub> (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal lea...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/4/337 |
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