Features of Ion-Electronic Emission from Surface of Semiconductors
The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg an...
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| Format: | Article |
| Language: | English |
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Sumy State University
2013-12-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04036.pdf |
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| author | A. Kurochka A. Sergienko S. Kurochka V. Kolybelkin S.G. Emelyanov E.V. Yakushko L.M. Chervjakov |
| author_facet | A. Kurochka A. Sergienko S. Kurochka V. Kolybelkin S.G. Emelyanov E.V. Yakushko L.M. Chervjakov |
| author_sort | A. Kurochka |
| collection | DOAJ |
| description | The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon. |
| format | Article |
| id | doaj-art-05baefdc765d4ff0b31b955d6cc9347b |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2013-12-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-05baefdc765d4ff0b31b955d6cc9347b2025-08-20T01:59:30ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722013-12-015404036-104036-3Features of Ion-Electronic Emission from Surface of SemiconductorsA. Kurochka0A. Sergienko1S. Kurochka2V. Kolybelkin3S.G. Emelyanov4E.V. Yakushko5L.M. Chervjakov6National University of Science and Technology "MISIS" (MISIS), 4, Leninskiy Pr., Moscow, RussiaNational University of Science and Technology "MISIS" (MISIS), 4, Leninskiy Pr., Moscow, RussiaNational University of Science and Technology "MISIS" (MISIS), 4, Leninskiy Pr., Moscow, RussiaResearch and production corporation "Istok", 2A, Vokzalnaya Str., Fryazino, Moscow Region, RussiaSouthwest State University, 94, 50 let Oktyabrya, 305040 Kursk, RussiaNational University of Science and Technology "MISIS" (MISIS), 4, Leninskiy Pr., Moscow, RussiaSouthwest State University, 94, 50 let Oktyabrya, 305040 Kursk, RussiaThe results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon.http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04036.pdfIon-electronic emissionIon-beam etchingSecondary electron currentAutoelectronic emissionElectron affinitySpace charge regio |
| spellingShingle | A. Kurochka A. Sergienko S. Kurochka V. Kolybelkin S.G. Emelyanov E.V. Yakushko L.M. Chervjakov Features of Ion-Electronic Emission from Surface of Semiconductors Журнал нано- та електронної фізики Ion-electronic emission Ion-beam etching Secondary electron current Autoelectronic emission Electron affinity Space charge regio |
| title | Features of Ion-Electronic Emission from Surface of Semiconductors |
| title_full | Features of Ion-Electronic Emission from Surface of Semiconductors |
| title_fullStr | Features of Ion-Electronic Emission from Surface of Semiconductors |
| title_full_unstemmed | Features of Ion-Electronic Emission from Surface of Semiconductors |
| title_short | Features of Ion-Electronic Emission from Surface of Semiconductors |
| title_sort | features of ion electronic emission from surface of semiconductors |
| topic | Ion-electronic emission Ion-beam etching Secondary electron current Autoelectronic emission Electron affinity Space charge regio |
| url | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04036.pdf |
| work_keys_str_mv | AT akurochka featuresofionelectronicemissionfromsurfaceofsemiconductors AT asergienko featuresofionelectronicemissionfromsurfaceofsemiconductors AT skurochka featuresofionelectronicemissionfromsurfaceofsemiconductors AT vkolybelkin featuresofionelectronicemissionfromsurfaceofsemiconductors AT sgemelyanov featuresofionelectronicemissionfromsurfaceofsemiconductors AT evyakushko featuresofionelectronicemissionfromsurfaceofsemiconductors AT lmchervjakov featuresofionelectronicemissionfromsurfaceofsemiconductors |