Features of Ion-Electronic Emission from Surface of Semiconductors
The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg an...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2013-12-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04036.pdf |
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| Summary: | The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon. |
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| ISSN: | 2077-6772 |