Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots
We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat tran...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/8032709 |
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| author | Zaoyang Li Lijun Liu Yunfeng Zhang Genshu Zhou |
| author_facet | Zaoyang Li Lijun Liu Yunfeng Zhang Genshu Zhou |
| author_sort | Zaoyang Li |
| collection | DOAJ |
| description | We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented. |
| format | Article |
| id | doaj-art-05ba5dfb58314e60ad948530c82e6fab |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-05ba5dfb58314e60ad948530c82e6fab2025-02-03T01:10:25ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/80327098032709Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon IngotsZaoyang Li0Lijun Liu1Yunfeng Zhang2Genshu Zhou3School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, ChinaSchool of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, ChinaYingli Green Energy Holding Co., Ltd., Baoding, Hebei 071051, ChinaState Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, ChinaWe carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.http://dx.doi.org/10.1155/2016/8032709 |
| spellingShingle | Zaoyang Li Lijun Liu Yunfeng Zhang Genshu Zhou Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots International Journal of Photoenergy |
| title | Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots |
| title_full | Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots |
| title_fullStr | Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots |
| title_full_unstemmed | Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots |
| title_short | Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots |
| title_sort | influence of crucible thermal conductivity on crystal growth in an industrial directional solidification process for silicon ingots |
| url | http://dx.doi.org/10.1155/2016/8032709 |
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