Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots
We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat tran...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/8032709 |
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