Growth of Zn–N Co-Doped Ga<sub>2</sub>O<sub>3</sub> Films by a New Scheme with Enhanced Optical Properties

Growth of Zn–N Co-Doped Ga<sub>2</sub>O<sub>3</sub> Films by a New Scheme with Enhanced Optical Properties

Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga<sub>2</sub>O&l...

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Bibliographic Details
Main Authors: Daogui Liao, Yijun Zhang, Ruikang Wang, Tianyi Yan, Chao Li, He Tian, Hong Wang, Zuo-Guang Ye, Wei Ren, Gang Niu
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
Subjects:
gallium oxide
atomic layer deposition
Zn–N co-doping
optoelectronic properties
Online Access:https://www.mdpi.com/2079-4991/15/13/1020
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