Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions
Germanium offers attractive optical properties despite being an indirect bandgap semiconductor, and new Ge-based devices are being optimized for sensing and photonics applications. In particular, considering the use of Ge as a sensor, improving its selectivity via organic grafting offers new alterna...
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| Format: | Article |
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2024-12-01
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| Series: | Chemistry Proceedings |
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| Online Access: | https://www.mdpi.com/2673-4583/16/1/21 |
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| author | Alessia Arrigoni Federico Turco Benedetta Maria Squeo Sonia Freddi Monica Bollani Tersilla Virgili Andrea Chiappini Laura Pasquardini Mariacecilia Pasini |
| author_facet | Alessia Arrigoni Federico Turco Benedetta Maria Squeo Sonia Freddi Monica Bollani Tersilla Virgili Andrea Chiappini Laura Pasquardini Mariacecilia Pasini |
| author_sort | Alessia Arrigoni |
| collection | DOAJ |
| description | Germanium offers attractive optical properties despite being an indirect bandgap semiconductor, and new Ge-based devices are being optimized for sensing and photonics applications. In particular, considering the use of Ge as a sensor, improving its selectivity via organic grafting offers new alternatives that are still under investigation. In this work, we focus on the selective functionalization of germanium in SiGe-patterned alloys using a custom thiol-based luminescent molecule, namely 6-[2,7-bis[5-(5-hexyl-2-thienyl)-2-thienyl]-9-(6-sulfanylhexyl)fluoren-9-yl]hexane-1-thiol. The process selectively targets regions with Ge, while leaving Si-rich areas uncovered. Moreover, this study emphasizes the importance of an oxygen-free environment, as performing the functionalization in an inert atmosphere significantly improves surface coverage. |
| format | Article |
| id | doaj-art-04f688d078fc43cca37c2b74ceb693be |
| institution | Kabale University |
| issn | 2673-4583 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Chemistry Proceedings |
| spelling | doaj-art-04f688d078fc43cca37c2b74ceb693be2025-08-20T03:26:21ZengMDPI AGChemistry Proceedings2673-45832024-12-011612110.3390/ecsoc-28-20193Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free ConditionsAlessia Arrigoni0Federico Turco1Benedetta Maria Squeo2Sonia Freddi3Monica Bollani4Tersilla Virgili5Andrea Chiappini6Laura Pasquardini7Mariacecilia Pasini8Institute of Chemical Sciences and Technologies (SCITEC)—CNR, 20133 Milano, ItalyInstitute of Chemical Sciences and Technologies (SCITEC)—CNR, 20133 Milano, ItalyInstitute of Chemical Sciences and Technologies (SCITEC)—CNR, 20133 Milano, ItalyLNESS Laboratory, Institute of Photonic and Nanotechnology (IFN)—CNR, 22100 Como, ItalyLNESS Laboratory, Institute of Photonic and Nanotechnology (IFN)—CNR, 22100 Como, ItalyInstitute of Photonic and Nanotechnology (IFN)—CNR, Piazza Leonardo da Vinci 32, 20133 Milano, ItalyFBK Photonics Unit, Institute of Photonic and Nanotechnology (IFN)—CNR, Via alla Cascata 56/c, 38123 Trento, ItalyIndivenire Srl, Via alla Cascata 56/C, 38123 Trento, ItalyInstitute of Chemical Sciences and Technologies (SCITEC)—CNR, 20133 Milano, ItalyGermanium offers attractive optical properties despite being an indirect bandgap semiconductor, and new Ge-based devices are being optimized for sensing and photonics applications. In particular, considering the use of Ge as a sensor, improving its selectivity via organic grafting offers new alternatives that are still under investigation. In this work, we focus on the selective functionalization of germanium in SiGe-patterned alloys using a custom thiol-based luminescent molecule, namely 6-[2,7-bis[5-(5-hexyl-2-thienyl)-2-thienyl]-9-(6-sulfanylhexyl)fluoren-9-yl]hexane-1-thiol. The process selectively targets regions with Ge, while leaving Si-rich areas uncovered. Moreover, this study emphasizes the importance of an oxygen-free environment, as performing the functionalization in an inert atmosphere significantly improves surface coverage.https://www.mdpi.com/2673-4583/16/1/21germaniumsiliconSiGefunctionalizationgraftingsemiconductor |
| spellingShingle | Alessia Arrigoni Federico Turco Benedetta Maria Squeo Sonia Freddi Monica Bollani Tersilla Virgili Andrea Chiappini Laura Pasquardini Mariacecilia Pasini Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions Chemistry Proceedings germanium silicon SiGe functionalization grafting semiconductor |
| title | Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions |
| title_full | Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions |
| title_fullStr | Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions |
| title_full_unstemmed | Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions |
| title_short | Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions |
| title_sort | optimizing germanium selective functionalization on patterned sige substrates with thiol based molecules the critical role of oxygen free conditions |
| topic | germanium silicon SiGe functionalization grafting semiconductor |
| url | https://www.mdpi.com/2673-4583/16/1/21 |
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