Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions

Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions

Germanium offers attractive optical properties despite being an indirect bandgap semiconductor, and new Ge-based devices are being optimized for sensing and photonics applications. In particular, considering the use of Ge as a sensor, improving its selectivity via organic grafting offers new alterna...

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Bibliographic Details
Main Authors: Alessia Arrigoni, Federico Turco, Benedetta Maria Squeo, Sonia Freddi, Monica Bollani, Tersilla Virgili, Andrea Chiappini, Laura Pasquardini, Mariacecilia Pasini
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Chemistry Proceedings
Subjects:
germanium
silicon
SiGe
functionalization
grafting
semiconductor
Online Access:https://www.mdpi.com/2673-4583/16/1/21
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