Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomenon is the redistribution of recombinational flows betw...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2015-04-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/16.1/html/16.1.0056.html |
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