Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomenon is the redistribution of recombinational flows betw...

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Bibliographic Details
Main Authors: O. M. Hontaruk, O. V. Konoreva, М. V. Lytovchenko, E. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2015-04-01
Series:Ядерна фізика та енергетика
Subjects:
gallium phosphide
electroluminescence
exciton
negative differential resistance
Online Access:http://jnpae.kinr.kiev.ua/16.1/html/16.1.0056.html
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