Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of 60Co in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a func...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/158403 |
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