Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film
With the accelerated development of artificial intelligence-oriented hardware components, research on low-power, high-density memory devices is actively being conducted. Among various memory devices, resistive switching devices with crossbar structures have been extensively researched owing to their...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Results in Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123024011617 |
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