High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction
Attributed to its excellent physicochemical properties, graphene (GR) has very active applications in the fields of catalysis, optoelectronic devices, and battery electrode materials. However, until now, regulating the type and density of carriers in GR is still crucial for its practical application...
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| Format: | Article |
| Language: | English |
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KeAi Communications Co., Ltd.
2024-12-01
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| Series: | Nano Materials Science |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589965123000946 |
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| author | Chenchen Zhao Yangyang Liu Dongbo Wang Wen He Bingke Zhang Jingwen Pan Zhi Zeng Donghao Liu Sihang Liu Shujie Jiao Xuan Fang Dan Fang Liancheng Zhao Jinzhong Wang |
| author_facet | Chenchen Zhao Yangyang Liu Dongbo Wang Wen He Bingke Zhang Jingwen Pan Zhi Zeng Donghao Liu Sihang Liu Shujie Jiao Xuan Fang Dan Fang Liancheng Zhao Jinzhong Wang |
| author_sort | Chenchen Zhao |
| collection | DOAJ |
| description | Attributed to its excellent physicochemical properties, graphene (GR) has very active applications in the fields of catalysis, optoelectronic devices, and battery electrode materials. However, until now, regulating the type and density of carriers in GR is still crucial for its practical applications. Here, reduced graphene oxide (RGO)-Bi2Te3 heterojunctions doped with different contents were prepared by a simple one-step method. The Bi2Te3 materials containing different RGO were made into broadband (365–850 nm) photoelectrochemical-type detectors, and the effects of the doping amount of RGO on the optoelectronic behavior of the devices and the intrinsic operation mechanism of the devices were investigated in detail. The results show that the values of Iph/Idark, Ri, and D∗ of Bi2Te3/RGO heterojunction devices obtained with 1 mg of RGO doping are 412, 6.072 mA/W, and 2.406 × 1010 Jones, respectively. It is anticipated that this work will provide a research basis for future quantitative tuning of the performance of micro-nano devices by GR. |
| format | Article |
| id | doaj-art-0279b1ff986847b9927f51802203895d |
| institution | Kabale University |
| issn | 2589-9651 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | KeAi Communications Co., Ltd. |
| record_format | Article |
| series | Nano Materials Science |
| spelling | doaj-art-0279b1ff986847b9927f51802203895d2025-01-04T04:56:52ZengKeAi Communications Co., Ltd.Nano Materials Science2589-96512024-12-0166741751High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunctionChenchen Zhao0Yangyang Liu1Dongbo Wang2Wen He3Bingke Zhang4Jingwen Pan5Zhi Zeng6Donghao Liu7Sihang Liu8Shujie Jiao9Xuan Fang10Dan Fang11Liancheng Zhao12Jinzhong Wang13School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China; Corresponding author.School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China; Corresponding author.School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, ChinaChangchun University Science and Technology, Sch Sci, State Key Lab High Power Semicond Lasers, Changchun, 130022, China; Corresponding author.Changchun University Science and Technology, Sch Sci, State Key Lab High Power Semicond Lasers, Changchun, 130022, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China; Corresponding author.School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China; Corresponding author.Attributed to its excellent physicochemical properties, graphene (GR) has very active applications in the fields of catalysis, optoelectronic devices, and battery electrode materials. However, until now, regulating the type and density of carriers in GR is still crucial for its practical applications. Here, reduced graphene oxide (RGO)-Bi2Te3 heterojunctions doped with different contents were prepared by a simple one-step method. The Bi2Te3 materials containing different RGO were made into broadband (365–850 nm) photoelectrochemical-type detectors, and the effects of the doping amount of RGO on the optoelectronic behavior of the devices and the intrinsic operation mechanism of the devices were investigated in detail. The results show that the values of Iph/Idark, Ri, and D∗ of Bi2Te3/RGO heterojunction devices obtained with 1 mg of RGO doping are 412, 6.072 mA/W, and 2.406 × 1010 Jones, respectively. It is anticipated that this work will provide a research basis for future quantitative tuning of the performance of micro-nano devices by GR.http://www.sciencedirect.com/science/article/pii/S2589965123000946PhotoelectrochemicalBi2Te3/RGO heterojunctionsDoping regulationSelf-drivenBroadband |
| spellingShingle | Chenchen Zhao Yangyang Liu Dongbo Wang Wen He Bingke Zhang Jingwen Pan Zhi Zeng Donghao Liu Sihang Liu Shujie Jiao Xuan Fang Dan Fang Liancheng Zhao Jinzhong Wang High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction Nano Materials Science Photoelectrochemical Bi2Te3/RGO heterojunctions Doping regulation Self-driven Broadband |
| title | High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction |
| title_full | High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction |
| title_fullStr | High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction |
| title_full_unstemmed | High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction |
| title_short | High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi2Te3 heterojunction |
| title_sort | high performance self driven broadband photoelectrochemical photodetector based on reduced graphene oxide bi2te3 heterojunction |
| topic | Photoelectrochemical Bi2Te3/RGO heterojunctions Doping regulation Self-driven Broadband |
| url | http://www.sciencedirect.com/science/article/pii/S2589965123000946 |
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