Optical properties of silicon carbide thin films deposited by atomic substitution on porous silicon

Optical properties of silicon carbide thin films deposited by atomic substitution on porous silicon

Silicon carbide films on porous-Si/Si substrates have attracted considerable attention due to their potential use in modern high-power electronic devices. Here, SiC/porous-Si/Si heterostructures fabricated by an atomic substitution method are investigated. Scanning electron microscopy shows the form...

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Bibliographic Details
Main Authors: Valerii Kidalov, Lukas Hertling, Roman Redko, Volodymyr Dzhagan, Sergii Mamykin, Andrey Revenko, Marc Assmann, Alena Dyadenchuk, Vitalii Kidalov, Dietrich R T Zahn
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Materials Research Express
Subjects:
silicon carbide
porous silicon
atomic substitution method
heterostructure
optical properties
Online Access:https://doi.org/10.1088/2053-1591/adf029
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https://doi.org/10.1088/2053-1591/adf029

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