Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets
A soda lime glass substrate is used for fabricating Cu2ZnSnS4 (CZTS) thin films using copper (II) sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) targets using an advanced co-sputtering deposition process. Following that, the films are annealed at 470 °C without sulfur (S). An algorithm bas...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
|
| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844025001380 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832573120968392704 |
|---|---|
| author | Munira Sultana Afrina Sharmin Md Rashed Alam Shahran Ahmed Md Aftab Ali Shaikh M.S. Bashar |
| author_facet | Munira Sultana Afrina Sharmin Md Rashed Alam Shahran Ahmed Md Aftab Ali Shaikh M.S. Bashar |
| author_sort | Munira Sultana |
| collection | DOAJ |
| description | A soda lime glass substrate is used for fabricating Cu2ZnSnS4 (CZTS) thin films using copper (II) sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) targets using an advanced co-sputtering deposition process. Following that, the films are annealed at 470 °C without sulfur (S). An algorithm based on the deposition rate of the previously specified targets set the co-sputtering condition, which maintains a deposition pressure of 5, 10, 15, and 20 mTorr. When studied at different deposition pressures, carrier concentration, resistivity, band gap, and crystallite size show significant correlations. The systematic variation of deposition pressure (5–20 mTorr) shows a constant increase in crystallite size. Resistivity decreases with pressure, but the band gap rises. The film has the highest resistivity at 5 mTorr Argon (Ar) deposition pressure and the highest carrier concentration at 10 mTorr. The EDX study shows that annealed films have a good stoichiometric ratio without sulfurization. Stoichiometry control, energy economy, and process simplicity improve when sulfurization is skipped for CZTS manufacturing. The findings explain correlations according to the intended use, thus experimentalists in this field will be interested in them. |
| format | Article |
| id | doaj-art-00fd53d2d75d4d33ab47a694e6cead63 |
| institution | Kabale University |
| issn | 2405-8440 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj-art-00fd53d2d75d4d33ab47a694e6cead632025-02-02T05:28:06ZengElsevierHeliyon2405-84402025-01-01112e41758Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targetsMunira Sultana0Afrina Sharmin1Md Rashed Alam2Shahran Ahmed3Md Aftab Ali Shaikh4M.S. Bashar5Bangladesh Council of Scientific and Industrial Research (BCSIR), BangladeshBangladesh Council of Scientific and Industrial Research (BCSIR), BangladeshBangladesh Council of Scientific and Industrial Research (BCSIR), BangladeshBangladesh Council of Scientific and Industrial Research (BCSIR), BangladeshBangladesh Council of Scientific and Industrial Research (BCSIR), BangladeshCorresponding author.; Bangladesh Council of Scientific and Industrial Research (BCSIR), BangladeshA soda lime glass substrate is used for fabricating Cu2ZnSnS4 (CZTS) thin films using copper (II) sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) targets using an advanced co-sputtering deposition process. Following that, the films are annealed at 470 °C without sulfur (S). An algorithm based on the deposition rate of the previously specified targets set the co-sputtering condition, which maintains a deposition pressure of 5, 10, 15, and 20 mTorr. When studied at different deposition pressures, carrier concentration, resistivity, band gap, and crystallite size show significant correlations. The systematic variation of deposition pressure (5–20 mTorr) shows a constant increase in crystallite size. Resistivity decreases with pressure, but the band gap rises. The film has the highest resistivity at 5 mTorr Argon (Ar) deposition pressure and the highest carrier concentration at 10 mTorr. The EDX study shows that annealed films have a good stoichiometric ratio without sulfurization. Stoichiometry control, energy economy, and process simplicity improve when sulfurization is skipped for CZTS manufacturing. The findings explain correlations according to the intended use, thus experimentalists in this field will be interested in them.http://www.sciencedirect.com/science/article/pii/S2405844025001380Co-sputtering depositionCZTS thin filmsDeposition pressure modulationMaterial properties correlationSulfurization effect in CZTS fabrication |
| spellingShingle | Munira Sultana Afrina Sharmin Md Rashed Alam Shahran Ahmed Md Aftab Ali Shaikh M.S. Bashar Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets Heliyon Co-sputtering deposition CZTS thin films Deposition pressure modulation Material properties correlation Sulfurization effect in CZTS fabrication |
| title | Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets |
| title_full | Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets |
| title_fullStr | Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets |
| title_full_unstemmed | Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets |
| title_short | Formulation and validation of mathematical model for co-sputtering conditions to attain stoichiometric CZTS films: Expedience of using all metal sulfide targets |
| title_sort | formulation and validation of mathematical model for co sputtering conditions to attain stoichiometric czts films expedience of using all metal sulfide targets |
| topic | Co-sputtering deposition CZTS thin films Deposition pressure modulation Material properties correlation Sulfurization effect in CZTS fabrication |
| url | http://www.sciencedirect.com/science/article/pii/S2405844025001380 |
| work_keys_str_mv | AT munirasultana formulationandvalidationofmathematicalmodelforcosputteringconditionstoattainstoichiometriccztsfilmsexpedienceofusingallmetalsulfidetargets AT afrinasharmin formulationandvalidationofmathematicalmodelforcosputteringconditionstoattainstoichiometriccztsfilmsexpedienceofusingallmetalsulfidetargets AT mdrashedalam formulationandvalidationofmathematicalmodelforcosputteringconditionstoattainstoichiometriccztsfilmsexpedienceofusingallmetalsulfidetargets AT shahranahmed formulationandvalidationofmathematicalmodelforcosputteringconditionstoattainstoichiometriccztsfilmsexpedienceofusingallmetalsulfidetargets AT mdaftabalishaikh formulationandvalidationofmathematicalmodelforcosputteringconditionstoattainstoichiometriccztsfilmsexpedienceofusingallmetalsulfidetargets AT msbashar formulationandvalidationofmathematicalmodelforcosputteringconditionstoattainstoichiometriccztsfilmsexpedienceofusingallmetalsulfidetargets |