Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

This study proposed an innovative method for growing gate oxide on silicon carbide (SiC), where silicon oxide (SiO<sub>2</sub>) was fabricated on a deposited Al<sub>2</sub>O<sub>3</sub> layer, achieving high quality gate oxide. A thin Al<sub>2</sub>O&l...

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Bibliographic Details
Main Authors: Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, Hongping Ma
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Nanomaterials
Subjects:
4H-SiC
SiC/SiO<sub>2</sub> interfaces
electrical properties
capacitors
Online Access:https://www.mdpi.com/2079-4991/15/7/555
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