Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to the examination of LFN amidst bias stress conditions...
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| Format: | Article |
| Language: | English |
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Springer
2024-11-01
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| Series: | Discover Nano |
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| Online Access: | https://doi.org/10.1186/s11671-024-04081-x |
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| author | Wonjun Shin Ji Ye Lee Jangsaeng Kim Sang Yeol Lee Sung-Tae Lee |
| author_facet | Wonjun Shin Ji Ye Lee Jangsaeng Kim Sang Yeol Lee Sung-Tae Lee |
| author_sort | Wonjun Shin |
| collection | DOAJ |
| description | Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to the examination of LFN amidst bias stress conditions, known to compromise TFT reliability. In this study, we investigate the effects of hot carrier stress (HCS) on zinc tin oxide (ZTO) TFTs by low-frequency noise (LFN) analysis. Asymmetric damage caused by HCS is analyzed by measuring the power spectral density at the source and drain sides. The excess noise generated by the HCS is analyzed with consideration of trap density of states (DOS). It is revealed that the needle defects are generated during the HCS, significantly affecting the LFN characteristics of the ZTO TFTs. Additionally, we observe a self-recovery behavior in the devices and demonstrate the relevant changes in the LFN characteristics following this phenomenon. This study provides valuable insights into the LFN characteristics of ZTO TFTs under HCS conditions and sheds light on the underlying mechanisms. |
| format | Article |
| id | doaj-art-0019dfcdae4840cd97d7b071382f1251 |
| institution | OA Journals |
| issn | 2731-9229 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Nano |
| spelling | doaj-art-0019dfcdae4840cd97d7b071382f12512025-08-20T02:22:30ZengSpringerDiscover Nano2731-92292024-11-011911810.1186/s11671-024-04081-xLow-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stressWonjun Shin0Ji Ye Lee1Jangsaeng Kim2Sang Yeol Lee3Sung-Tae Lee4Department of Semiconductor Convergence Engineering, Sungkyunkwan UniversityDepartment of Electrical Engineering, Korea UniversityDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National UniversityElectronic Engineering Department, Gachon UniversitySchool of Electronic and Electrical Engineering, Hongik UniversityAbstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to the examination of LFN amidst bias stress conditions, known to compromise TFT reliability. In this study, we investigate the effects of hot carrier stress (HCS) on zinc tin oxide (ZTO) TFTs by low-frequency noise (LFN) analysis. Asymmetric damage caused by HCS is analyzed by measuring the power spectral density at the source and drain sides. The excess noise generated by the HCS is analyzed with consideration of trap density of states (DOS). It is revealed that the needle defects are generated during the HCS, significantly affecting the LFN characteristics of the ZTO TFTs. Additionally, we observe a self-recovery behavior in the devices and demonstrate the relevant changes in the LFN characteristics following this phenomenon. This study provides valuable insights into the LFN characteristics of ZTO TFTs under HCS conditions and sheds light on the underlying mechanisms.https://doi.org/10.1186/s11671-024-04081-xZinc tin oxide (ZTO)Low-frequency noise (LFN)Hot carrier stress (HCS)Subgap density of states |
| spellingShingle | Wonjun Shin Ji Ye Lee Jangsaeng Kim Sang Yeol Lee Sung-Tae Lee Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress Discover Nano Zinc tin oxide (ZTO) Low-frequency noise (LFN) Hot carrier stress (HCS) Subgap density of states |
| title | Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress |
| title_full | Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress |
| title_fullStr | Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress |
| title_full_unstemmed | Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress |
| title_short | Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress |
| title_sort | low frequency noise analysis on asymmetric damage and self recovery behaviors of znsno thin film transistors under hot carrier stress |
| topic | Zinc tin oxide (ZTO) Low-frequency noise (LFN) Hot carrier stress (HCS) Subgap density of states |
| url | https://doi.org/10.1186/s11671-024-04081-x |
| work_keys_str_mv | AT wonjunshin lowfrequencynoiseanalysisonasymmetricdamageandselfrecoverybehaviorsofznsnothinfilmtransistorsunderhotcarrierstress AT jiyelee lowfrequencynoiseanalysisonasymmetricdamageandselfrecoverybehaviorsofznsnothinfilmtransistorsunderhotcarrierstress AT jangsaengkim lowfrequencynoiseanalysisonasymmetricdamageandselfrecoverybehaviorsofznsnothinfilmtransistorsunderhotcarrierstress AT sangyeollee lowfrequencynoiseanalysisonasymmetricdamageandselfrecoverybehaviorsofznsnothinfilmtransistorsunderhotcarrierstress AT sungtaelee lowfrequencynoiseanalysisonasymmetricdamageandselfrecoverybehaviorsofznsnothinfilmtransistorsunderhotcarrierstress |