Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to the examination of LFN amidst bias stress conditions...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2024-11-01
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| Series: | Discover Nano |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-024-04081-x |
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