Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations by Mingjun Zhang, Jinyang Huang, Zihan Wang, Paramasivam Balasubramanian, Yan Yan, Ye Zhou, Su-Ting Han, Lei Lu, Meng Zhang

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Analog Replicator of Long Chaotic Radio Pulses for Coherent Processing by Lev Kuzmin, Elena Efremova, Pavel Vladyka, Vadim Itskov

“…The method can be implemented in various frequency ranges in the class of analog generators of chaotic oscillations, since the employed generation method, i.e., modulation of a transistor generator by supply voltage, is natural for radio engineering.…”
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Development of a Bipolar Radio-frequency Power Supply for Structures of Lossless Ion Manipulations by Qing LIU, Run-ze XU, Yun-jing ZHANG, Ling-feng LI, Peng LI

“…Structures for lossless ion manipulations (SLIM) is a new structure to realize the lossless transmission of gas phase ions by using the combination of electrostatic fields, radio frequency electric fields and ion driving electric fields under special background gas. …”
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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

“…Abstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. …”
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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance by Ria Bose, Jatindra Nath Roy

“…Abstract In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double gate TFET and dual metal TFET device. …”
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AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz by Kazuki Nomoto, Joseph Casamento, Thai-Son Nguyen, Lei Li, Hyunjea Lee, Chandrashekhar Savant, Austin Lee Hickman, Takuya Maeda, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel Hannan, James C. M. Hwang, Debdeep Jena, Huili Grace Xing

“…Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. …”
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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

“…In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. …”
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Design of a Cell Phone Detector. by Atuheire, Gift

“…It does this by detecting the signal produced by the cellphone and this causes the LED to blink and buzzer to sound. A BFN38 transistor is the major component incorporated within this project as an RF transistor that can amplify the low Radio frequencies hence the increase on the range compared to the other project circuits without any RF transistor…”
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Radiation Characteristics of 3D Resonant Cavity Antenna with Grid-Oscillator Integrated Inside by L. A. Haralambiev, H. D. Hristov

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Ultrawideband LNA 1960–2019: Review by Shahab Shahrabadi

“…Abstract To the best of the author's knowledge, several studies during 1960–2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio‐Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. …”
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Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation by Gim Heng Tan, Roslina Mohd Sidek, Harikrishnan Ramiah, Wei Keat Chong, De Xing Lioe

“…The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. …”
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