Step-necking growth of silicon nanowire channels for high performance field effect transistors by Lei Wu, Zhiyan Hu, Lei Liang, Ruijin Hu, Junzhuan Wang, Linwei Yu

“…Abstract Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. …”
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Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels by Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan

Subjects: “…Bipolar junction transistor…”
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Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities by Roberto Baca Arroyo

“…The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. …”
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A novel 8T SRAM cell using PFC and PPC VS-CNTFET transistor by Vipin Kumar Sharma, Abhishek Kumar

“…The experiment with carbon nanotube field-effect transistor (CNTFET) offers higher drive current and lower power consumption compared to conventional silicon-based transistors. …”
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Pass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications by Chakali Chandrasekhar, Mohammed Mahaboob Basha, Sari Mohan Das, Oruganti Hemakesavulu, Mohan Dholvan, Javed Syed

“…The architecture design has the lowest silicon area. The implementation of the proposed design was taken under 55 nm CMOS technology. …”
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Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory by Lihua Xu, Kaifei Chen, Zhi Li, Yue Zhao, Lingfei Wang, Ling Li

“…Different from classical silicon-based devices, in-depth studies on the performances of nanoscale multi-gate transistors (e.g., a-InGaZnO-FET) are still barely conducted for physical description, due to the complicated multi-gating principle, finite-size effects on transport, increased variation sources and enlarged parasitic effect. …”
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Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays by Yuhao Shan, Yanfei Liu, Hao Zheng, Zheng Peng

“…Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. …”
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Digital Mini-LED Lighting Using Organic Thin-Film Transistors Reaching over 100,000 Nits of Luminance by Chia-Hung Tsai, Yang-En Wu, Chien-Chi Huang, Li-Yin Chen, Fang-Chung Chen, Hao-Chung Kuo

“…OTFTs offer a flexible and lightweight alternative to conventional silicon-based transistors, enabling innovative and versatile display designs. …”
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Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth by Zhenxin Yang, Jiale Su, Junzhan Wang, Xuanhe Li, Fushun Li, Juntao Hu, Nan Chen, Zhang Tao, Delong Yang, Deng‐Ke Wang, Qiang Zhu, Yuhui Liao, Zheng‐Hong Lu

“…Using PT, we fabricated organic thin‐film transistors (OTFTs) using solutions containing various small molecules such as rubrene and 2‐decyl‐7‐phenyl‐[1]benzothieno[3,2‐b][1]benzothiophene. …”
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X-Ray Performance of SiC NPN Radiation Detector by Jing Wang, Leidang Zhou, Liang Chen, Silong Zhang, Fangbao Wang, Tingting Fan, Zhuo Chen, Song Bai, Xiaoping Ouyang

“…In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. …”
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Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications by D.-L. Kwong, X. Li, Y. Sun, G. Ramanathan, Z. X. Chen, S. M. Wong, Y. Li, N. S. Shen, K. Buddharaju, Y. H. Yu, S. J. Lee, N. Singh, G. Q. Lo

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A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission by Hualian Tang, Ailan Tang, Weifeng Liu, Jingxiang Huang, Jianjun Song, Wenjie Sun

“…This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. …”
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A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts by Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin

“…It is designed with Source floating gate (SFG) and drain floating gate (DFG) and adopts two kinds of metal silicide contacts to form complementary low Schottky barrier both between the S/D electrodes and the conduction band of silicon and between the S/D electrodes and the valence band of silicon at the same time. …”
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Schottky‐barrier graphene nanoribbon field‐effect transistors‐based field‐programmable gate array's configurable logic block and routing switch by Sayed Ali Seif Kashani, Hossein Karimiyan Alidash, Sandeep Miryala

“…Besides, International Technology Roadmap for Semiconductor (ITRS) has predicted scaling limitation for conventional silicon (Si)‐based devices. Researches on post‐Si materials have proved that carbon could be one of the material which can replaced with Si. …”
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Design of Analog Signal Processing Applications Using Carbon Nanotube Field Effect Transistor-Based Low-Power Folded Cascode Operational Amplifier by Varsha S. Bendre, A. K. Kureshi, Saurabh Waykole

“…The carbon nanotube field effect transistors (CNFETs) have been reconnoitred as the stimulating aspirant for the future generations of integrated circuit (IC) devices. …”
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Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique by Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki

Subjects: “…double-gate metal oxide silicon field effect transistors…”
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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

“…Abstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. …”
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Design of Binary and Ternary Logic Inverters Based on Silicon Feedback FETs Using TCAD Simulator by Ashkan Horri

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Field test of a silicon carbide metro propulsion system with reduced losses and acoustic noise by Martin Lindahl, Torbjörn Trostén, Daniel Jansson, Mikael H Johansson, Erik Velander, Anders Blomberg, Hans‐Peter Nee

“…Abstract Results are reported from a successful field test with a silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) traction inverter. …”
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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics by Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang

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