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  1. 901

    High-Order Mode Rotator on the SOI Integrated Platform by Jiamin Wang, Donghui Zhao, Jing Xu, Xun Xue, Xinliang Zhang

    Published 2016-01-01
    “…The mode conversion efficiency and the corresponding length of the mode rotator device are presented as a function of design parameters for both the transverse magnetic (TM) and transverse electric (TE) polarizations. …”
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    Article
  2. 902

    Analyzing Fully Depleted SOI NC-MOSFET for Enhanced Bio-Sensor and Digital Circuit Applications by Vydha Pradeep Kumar, Deepak Kumar Panda, Aruru Sai Kumar, B. Naresh Kumar Reddy, Ch. Rama Prakasha Reddy

    Published 2025-01-01
    “…The study mainly aims to use ferroelectric (FE) material to improve the performance and efficiency of FDSOI-NC-MOSFETs compared to conventional planar MOSFETs. …”
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  3. 903

    Parameter Study of 500 nm Thick Slot-Type Photonic Crystal Cavities for Cavity Optomechanical Sensing by Zhe Li, Jun Liu, Yi Zhang, Chenguwei Xian, Yifan Wang, Kai Chen, Gen Qiu, Guangwei Deng, Yongjun Huang, Boyu Fan

    Published 2025-06-01
    “…This study proposes a 500 nm thick silicon-based 2D slot-type PhC cavity design for advanced sensing applications, fabricated on a silicon-on-insulator (SOI) substrate with optimized air slot structures. …”
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  4. 904

    System Optimization and Robustness Stability Control for GIS Inspection Robot in Complex Microgrid Networks by Yu Yan, Wei Jiang, Zhiping Luo, Jianjun Zhang, Weidong Liu

    Published 2021-01-01
    “…GIS (gas-insulated switchgear) is important equipment in the substation system in a complex microgrid network. …”
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  5. 905

    Thermo-Mechanical Performance of Sustainable Lightweight Sandwich Panels Utilizing Ultra-High-Performance Fiber-Reinforced Concrete by Mariam Farouk Ghazy, Metwally abd allah Abd Elaty, Mohamed Abd Elkhalek Sakr, Eslam Mohamed Arafa

    Published 2025-02-01
    “…Sandwich panels, consisting of two concrete wythes that encase an insulating core, are designed to improve energy efficiency and reduce the weight of construction applications. …”
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  6. 906

    Ga<sub>2</sub>O<sub>3</sub>-Based Optoelectronic Memristor and Memcapacitor Synapse for In-Memory Sensing and Computing Applications by Hye Jin Lee, Jeong-Hyeon Kim, Seung Hun Lee, Sung-Nam Lee

    Published 2024-12-01
    “…Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. …”
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  7. 907

    Tips on pre-emptive hemostasis of large vessels during endoscopic full-thickness resection of a large gastrointestinal stromal tumor by Abdullah Abbasi, MD, Maham Hayat, MD, Saurabh Chandan, MD, Sagar Pathak, MD, Muhammad K. Hasan, MD, Kambiz K. Kadkhodayan, MD, Peter V. Draganov, MD, Dennis Yang, MD

    Published 2025-07-01
    “…Innovation and development of dedicated devices are urgently needed to increase the efficiency and safety of these procedures as we continue to expand our therapeutic boundaries.…”
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  8. 908

    RF injection scanning tunneling spectroscopy of a superconducting NbSe2 surface by Md. Arafat Ali, Zhipeng Wang, Mohammad Ikram Hossain, Ferdous Ara, Syed Mohammad Fakruddin Shahed, Tadahiro Komeda

    Published 2025-07-01
    “…We conclude that the different coefficient is due to the change of actual VAc on the two domains originating from a different dielectric constant and shielding efficiency for the electric field of RF.…”
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  9. 909
  10. 910

    Performance Evaluation of a Commercial-Scale Sulfur Hexafluoride (SF6) Thermal Destruction Process by Mi-Yeong Kim, Joong-Won Lee, Ji-Ho Ahn, Young-Hwan Byun, Su-Bin Yun

    Published 2024-12-01
    “…As part of this, the Korea Electric Power Corporation (KEPCO) is planning to apply an Eco Gas Insulated Switchgear (E-GIS) that does not use SF6. …”
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    Article
  11. 911

    Understanding stability and reactivity of transition metal single-atoms on graphene by Wesley Oliveira Morais, João Paulo Cerqueira Felix, Gabriel Reynald da Silva, Carlos Maciel de Oliveira Bastos, Alexandre C. Dias, Efracio Mamani Flores, Celso R. C. Rêgo, Vinícius da Silva Ramos de Sousa, Diego Guedes-Sobrinho, Maurício J. Piotrowski

    Published 2025-05-01
    “…Abstract Recently, single-atom catalysts (SACs) based on transition metals (TMs) have been identified as highly active catalysts with excellent atomic efficiency, reduced consumption of expensive materials, well-defined active centers, and tunable activity and selectivity. …”
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  12. 912
  13. 913

    Broadband Millimeter-Wave Front-End Module Design Considerations in FD-SOI CMOS vs. GaN HEMTs by Clint Sweeney, Donald Y. C. Lie, Jill C. Mayeda, Jerry Lopez

    Published 2024-12-01
    “…., 30–300 GHz) band: one designed in a 22 nm fully depleted silicon on insulator (FD-SOI) CMOS process, and the other in an advanced 40 nm Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) process. …”
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