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901
High-Order Mode Rotator on the SOI Integrated Platform
Published 2016-01-01“…The mode conversion efficiency and the corresponding length of the mode rotator device are presented as a function of design parameters for both the transverse magnetic (TM) and transverse electric (TE) polarizations. …”
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902
Analyzing Fully Depleted SOI NC-MOSFET for Enhanced Bio-Sensor and Digital Circuit Applications
Published 2025-01-01“…The study mainly aims to use ferroelectric (FE) material to improve the performance and efficiency of FDSOI-NC-MOSFETs compared to conventional planar MOSFETs. …”
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903
Parameter Study of 500 nm Thick Slot-Type Photonic Crystal Cavities for Cavity Optomechanical Sensing
Published 2025-06-01“…This study proposes a 500 nm thick silicon-based 2D slot-type PhC cavity design for advanced sensing applications, fabricated on a silicon-on-insulator (SOI) substrate with optimized air slot structures. …”
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904
System Optimization and Robustness Stability Control for GIS Inspection Robot in Complex Microgrid Networks
Published 2021-01-01“…GIS (gas-insulated switchgear) is important equipment in the substation system in a complex microgrid network. …”
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905
Thermo-Mechanical Performance of Sustainable Lightweight Sandwich Panels Utilizing Ultra-High-Performance Fiber-Reinforced Concrete
Published 2025-02-01“…Sandwich panels, consisting of two concrete wythes that encase an insulating core, are designed to improve energy efficiency and reduce the weight of construction applications. …”
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906
Ga<sub>2</sub>O<sub>3</sub>-Based Optoelectronic Memristor and Memcapacitor Synapse for In-Memory Sensing and Computing Applications
Published 2024-12-01“…Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. …”
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907
Tips on pre-emptive hemostasis of large vessels during endoscopic full-thickness resection of a large gastrointestinal stromal tumor
Published 2025-07-01“…Innovation and development of dedicated devices are urgently needed to increase the efficiency and safety of these procedures as we continue to expand our therapeutic boundaries.…”
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908
RF injection scanning tunneling spectroscopy of a superconducting NbSe2 surface
Published 2025-07-01“…We conclude that the different coefficient is due to the change of actual VAc on the two domains originating from a different dielectric constant and shielding efficiency for the electric field of RF.…”
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909
Intrinsic electro-optical and thermodynamic properties of 4,4′-Bis(N-carbazolyl)-1,1′-biphenyl (CBP) as a potential candidate for nonlinear optical applications: a DFT investigatio...
Published 2025-07-01“…The results show that CBP is an insulator with a bandgap of 4.07 eV, exhibiting good holes mobility (1.52 cm2V⁻1 s⁻1) and thermodynamic stability. …”
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910
Performance Evaluation of a Commercial-Scale Sulfur Hexafluoride (SF6) Thermal Destruction Process
Published 2024-12-01“…As part of this, the Korea Electric Power Corporation (KEPCO) is planning to apply an Eco Gas Insulated Switchgear (E-GIS) that does not use SF6. …”
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911
Understanding stability and reactivity of transition metal single-atoms on graphene
Published 2025-05-01“…Abstract Recently, single-atom catalysts (SACs) based on transition metals (TMs) have been identified as highly active catalysts with excellent atomic efficiency, reduced consumption of expensive materials, well-defined active centers, and tunable activity and selectivity. …”
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912
Development of 1∶4 Scale Model Coil Cryogenic System of Defocus Magnet for 2 GeV Accelerator
Published 2025-01-01“…The test results also prove the feasibility of using helium circulation to cool a large, non-insulated, and dry HTS coil in vacuum environment. …”
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913
Broadband Millimeter-Wave Front-End Module Design Considerations in FD-SOI CMOS vs. GaN HEMTs
Published 2024-12-01“…., 30–300 GHz) band: one designed in a 22 nm fully depleted silicon on insulator (FD-SOI) CMOS process, and the other in an advanced 40 nm Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) process. …”
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