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  1. 41

    Cost-Effective Flight Sequencing and Gate Assignment Considering Transfer Time under Pandemic Conditions by Mei Xiao, Yu Liu, Steven Chien, Ching-Jung Ting

    Published 2023-01-01
    “…An efficient hub-and-spoke network (HSN) can reduce operating costs and passenger delays at hubs through proper sequencing of flights and assignment of gates. …”
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    Article
  2. 42

    A FPGA-based Configurable Chassis Parallel Bus Technology by FAN Linbin, LI Miao, TAN Lei

    Published 2023-02-01
    “…In some existing application scenarios, industrial control platforms have expandable requirements for the data space management of chassis parallel bus. …”
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    Article
  3. 43

    A Systematic Review and Comparative Analysis Approach to Boom Gate Access Using Plate Number Recognition by Asaju Christine Bukola, Pius Adewale Owolawi, Chuling Du, Etienne Van Wyk

    Published 2024-11-01
    “…This comparative analysis aims to determine the most appropriate YOLO version for the task, optimizing both security and efficiency in boom gate access control systems. By optimizing the capabilities of advanced YOLO algorithms, the proposed method seeks to improve the reliability and effectiveness of access control through precise and rapid plate number recognition. …”
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    Article
  4. 44

    The Ferro-Power MOSFET: Enhancing Short-Circuit Robustness in Power Switches With a Ferroelectric Gate Stack by Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace, Giovanni A. Salvatore

    Published 2025-01-01
    “…Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are essential in modern electronics, enabling efficient power conversion and control in a wide range of applications. …”
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    Article
  5. 45

    Enhanced U-Net for Underwater Laser Range-Gated Image Restoration: Boosting Underwater Target Recognition by Peng Liu, Shuaibao Chen, Wei He, Jue Wang, Liangpei Chen, Yuguang Tan, Dong Luo, Wei Chen, Guohua Jiao

    Published 2025-04-01
    “…By selectively capturing photons within a controlled temporal gate, this technique effectively suppresses backscattering noise-enhancing image clarity, contrast, and detection range. …”
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    Article
  6. 46
  7. 47

    Process Development of a Liquid-Gated Graphene Field-Effect Transistor Gas Sensor for Applications in Smart Agriculture by Jian Lu, Naoki Shiraishi, Ryo Imaizumi, Lan Zhang, Mutsumi Kimura

    Published 2024-10-01
    “…A compact, multi-channel ionic liquid-gated graphene field-effect transistor (FET) has been proposed and developed in our work for on-field continuous monitoring of nitrate nitrogen and other nitrogen fertilizers to achieve sustainable and efficient farming practices in agriculture. …”
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    Article
  8. 48

    Reconfigurable Dual‐Gate Ferroelectric Field‐Effect Transistors Based on Semiconducting Polymer for Logic Operations and Synaptic Applications by Yuqing Ding, Xinzhao Xu, Yangjiang Wu, Haoqin Zhang, Lin Shao, Zhihui Wang, Hailing Zhang, Yan Zhao, Yunqi Liu

    Published 2025-04-01
    “…Specifically, the DG‐OFET can be utilized as synaptic devices that can successfully perform both short‐term and long‐term synaptic plasticity by manipulating the input gate of artificial pulse voltages, depending on the switching mechanism between bottom‐gate controlled electrostatic doping and top‐gate induced ferroelectric polarization. …”
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    Article
  9. 49

    Electronic transport properties in lithium cobalt oxide battery electrode material studied in ion-gated transistor configuration by Melchiade Manirakiza, José Ramón Herrera Garza, Ramin Karimi Azari, Kesawarthini Bhaskaran, Antunes Staffolani, Francesca Soavi, Clara Santato

    Published 2025-06-01
    “…LCO-based composite is employed as transistor channel interfaced with the ionic liquids: 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) and 1-Butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide ([PYR14][TFSI]), both without and with lithium bis(trifluoromethane)sulfonimide salt (LiTFSI). The gate-source bias controls the degree of lithiation/de-lithiation in the LCO composite-based IGT. …”
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    Article
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  12. 52

    The Characteristics of the pin-Structure with a Discrete Metallic Surface i-Region by A. A. Danilenko, A. D. Ivanov, V. L. Ivanov, V. V. Marochkin, M. N. Ivanovich, P. V. Vsevolodovich

    Published 2020-02-01
    “…Four pin-photodetector structures were modeled, in which the control gates were performed in the form of metal–dielectric–semiconductor structure. …”
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  15. 55

    Design and Analysis of High-K Wrapped GaN Gate All Around FET as High-Frequency Device in IOT Systems by Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta

    Published 2025-01-01
    “…Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAA FETs) are promising candidates for next-generation energy-efficient electronics due to their exceptional material properties, such as high electron mobility, wide bandgap, and superior thermal stability. …”
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  16. 56
  17. 57

    Sediment-flushing equilibrium downstream of tide gates in a coastal region: Findings from a 36-day prototype water-diversion experiment by Fanzhi Meng, Long Xiang, Jianying Zhu, Haishen Lv, Cuiling Jiang

    Published 2025-08-01
    “…These insights offer coastal regions with tide-gate systems a scalable, eco-sensitive alternative to dredging, aligning sediment control with sustainable water resource management under changing hydrological conditions.…”
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  18. 58

    Heralded fidelity-robust high-dimensional quantum computing by Fang-Fang Du, Zhi-Guo Fan, Zhuo-Ya Bai, Qiu-Lin Tan

    Published 2025-01-01
    “…In the paper, we propose a 2-qudit controlled-NOT (CNOT) gate in a $4\times4$ -dimensional space and a 3-qudit controlled-controlled-NOT (Toffoli) gate in a $4\times4\times4$ -dimensional space, both equipped with error-heralded units. …”
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  19. 59

    Constructing resource-efficient quantum circuits for AES by Liao-Liang Jiang, Liao-Liang Jiang, Bin-Bin Cai, Fei Gao, Fei Gao, Fei Gao, Su-Juan Qin, Su-Juan Qin, Su-Juan Qin, Zheng-Ping Jin, Zheng-Ping Jin, Zheng-Ping Jin, Qiao-Yan Wen, Qiao-Yan Wen, Qiao-Yan Wen

    Published 2025-04-01
    “…In this paper, we study how to construct resource-efficient quantum circuits for AES. We consider the product of T-gates depth and width (TDW) and the product of full depth and width (FDW) as optimization targets. …”
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