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  1. 21

    CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER by Teuku Andi Fadlly, Rachmad Almi Putra

    Published 2020-01-01
    “…Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO2 parallel in the Cu2O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO2 is an n-type semiconductor. …”
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    Article
  2. 22

    Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches by J. A. Solovjov

    Published 2021-10-01
    “…The results obtained can be used to develop the structure and geometry of Schottky diodes with a metaloxidesemiconductor trench structure with required electrical parameters.…”
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    Article
  3. 23

    Surface modification of aluminum on a silicon chip by citric acid treatment by Moataz Mekawy, Kazuya Iida, Akitsu Shigetou, Jin Kawakita

    Published 2025-08-01
    “…This promising surface treatment method is expected to help enhance the removal of oxide layers formed on metal-based components.…”
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    Article
  4. 24

    Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures by Takuma Kobayashi, Hiroki Fujimoto, Shinji Kamihata, Keiji Hachiken, Masahiro Hara, Heiji Watanabe

    Published 2025-01-01
    “…While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metaloxidesemiconductor field-effect transistors, degradation of reliability remains a serious issue. …”
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    Article
  5. 25

    Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area by ZHANG Dahua, MA Liang, ZHANG Zhonghua, TAN Canjian, LIU Guoyou

    Published 2017-01-01
    “…Based on the “U” shape enhanced double diffused metal oxide semiconductor (DMOS+) planar gate cell structure, enhanced controllable punch through (CPT+) and junction termination extension structure, a strong turn-off current capability and wide short circuit safe operation area 4 500 V IGBT chip was developed with optimizing the carrier stored layer, the buffer layer and the collector structure, low on-state loss. …”
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    Article
  6. 26

    IGBT Overcurrent Capabilities in Resonant Circuits by Basil Mohammed Al-Hadithi, Miguel Jimenez

    Published 2024-11-01
    “…The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. …”
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  7. 27

    Multispectral Polarization‐Insensitive Graphene/Silicon Guided Mode Resonance Active Metasurfaces by Prateeksha Sharma, Dor Oz, Eleftheria Lampadariou, Spyros Doukas, Elefterios Lidorikis, Ilya Goykhman

    Published 2025-08-01
    “…An advanced complementary metaloxidesemiconductor (CMOS)compatible graphene/silicon multispectral active metasurfaces are investigated based on guided‐mode resonance filters. …”
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    Article
  8. 28

    Region‐Selective Growth of Cu2O Shell on Gold Nanoprisms by Ziyoda Ganieva, Dávid Kovács, Zoltán Osváth, Dániel Zámbó, András Deák

    Published 2025-08-01
    “…Abstract Structural control in metal/semiconductor multicomponent nanoparticles can lead to advanced functional properties, as optoelectronic processes and accessibility (e.g., by charge carriers or molecules) of the different components can be simultaneously tailored. …”
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  9. 29

    Proactive Multisensory Solution for Mitigating Thermal Runaway Risks in Li-Ion Batteries by U. S. Fiadosenka, Linxi Dong, Chenxi Yue, G. G. Gorokh

    Published 2025-04-01
    “…The system integrates three types of sensors: a capacitive pressure sensor, a gas sensor based on a metal oxide semiconductor, and a platinum temperature sensor. …”
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  10. 30

    Enhancing ferroelectric stability: wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices by Jingxuan Li, Shiqing Deng, Liyang Ma, Yangyang Si, Chao Zhou, Kefan Wang, Sizhe Huang, Jiyuan Yang, Yunlong Tang, Yu-Chieh Ku, Chang-Yang Kuo, Yijie Li, Sujit Das, Shi Liu, Zuhuang Chen

    Published 2025-07-01
    “…Abstract The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. …”
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    Article
  11. 31

    BGIR: A Low-Illumination Remote Sensing Image Restoration Algorithm with ZYNQ-Based Implementation by Zhihao Guo, Liangliang Zheng, Wei Xu

    Published 2025-07-01
    “…When a CMOS (Complementary MetalOxideSemiconductor) imaging system operates at a high frame rate or a high line rate, the exposure time of the imaging system is limited, and the acquired image data will be dark, with a low signal-to-noise ratio and unsatisfactory sharpness. …”
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  12. 32

    Engineered Porosity ZnO Sensor Enriched with Oxygen Vacancies Enabled Extraordinary Sub-ppm Sensing of Hydrogen Sulfide and Nitrogen Dioxide Air Pollution Gases at Low Temperature... by Engin Ciftyurek, Zheshen Li, Klaus Schierbaum

    Published 2024-11-01
    “…Porosity and surface activity of metal oxide semiconductor (MOS)-based sensors are both vital for sensing at low temperatures. …”
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  13. 33

    A neuromorphic processor with on-chip learning for beyond-CMOS device integration by Hugh Greatorex, Ole Richter, Michele Mastella, Madison Cotteret, Philipp Klein, Maxime Fabre, Arianna Rubino, Willian Soares Girão, Junren Chen, Martin Ziegler, Laura Bégon-Lours, Giacomo Indiveri, Elisabetta Chicca

    Published 2025-07-01
    “…One key challenge is determining which devices and materials are best suited for specific functions and how they can be paired with complementary metal-oxide-semiconductor circuitry. To address this, we present a mixed-signal neuromorphic architecture designed to explore the integration of on-chip learning circuits and novel two- and three-terminal devices. …”
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  14. 34

    On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices by Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz

    Published 2025-08-01
    “…Notably, this p‐type behavior is consistently observed regardless of the metal contacts, semiconductor thickness, or ambient conditions, and remains stable even after high‐vacuum and high‐temperature annealing. …”
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  15. 35