3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance by ZHOU Feiyu, NING Xubin, Luther Ngwendson, XIAO Qiang, Ian Deviny, DAI Xiaoping

“…It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. …”
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A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits by Yanjun Fu, Zhigang Peng, Zhiyong Dong, Pei Li, Yuan Wei, Dongya Zhang, Yinghong Zuo, Jinhui Zhu, Shengli Niu

“…Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. …”
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Oxidized-driven and strain-tunable anisotropic effects in crystalline graphene oxides by Chengyong Zhong, Junjie Ma, Xuelian Li, Xin Jin, Peng Yu

“…Herein, we reveal that highly anisotropic semiconductors and strongly tilted Dirac cones are discovered in a family of crystalline graphene oxide named cGO-nz. …”
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Long wavelength infrared sensor array using VO2 microstructures fabricated on visible GaN LED by Minhyeok Shin, Anh Thi Dieu Nguyen, Taenam Kwon, Jaesung Kim, Miju Park, Nafila Amalia Syahida, Kunook Chung

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Cationic substitution, dynamical stability, thermal stability, electronic and thermoelectric properties in 2D dialkali metal monoxides via DFT and ML approach by S. Chellaiya, Thomas Rueshwin, R. D. Eithiraj

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Structural, Morphological, and Optical Properties of Nano- and Micro-Structures of ZnO Obtained by the Vapor–Solid Method at Atmospheric Pressure and Photocatalytic Activity by Carlos Bueno, Adan Luna, Gregorio Flores, Héctor Juárez, Mauricio Pacio, René Pérez, Javier Flores-Méndez, David Maestre, Raúl Cortés-Maldonado

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Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium–Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability by Chen-Yi Cho, Chui-Yi Chiu, Sourav De, Tuo-Hung Hou

“…The use of hafnium-zirconium oxide (HZO) in ferroelectric memory has garnered significant interest due to its excellent scalability and compatibility with complementary metal-oxide-semiconductor and back-end-of-line processes. …”
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Biosynthesis and characterization of copper oxide nanoparticles from Plumbago zeylanica leaf extract for antibacterial and antioxidant activities by Hailemichael Tegenu Gebrie, Melesse Ababay Assege, Desta Shumuye Meshesha, Birhanu Ayalew Tebeje, Getaneh Worku Moges, Ayalew Temesgen Wodajo, Gizachew Mulugeta Manahelohe, Aderaw Anteneh Belew

“…Abstract In recent years, green synthesis has become a prevalent method for producing metallic oxide nanoparticles, preferred over traditional physical and chemical processes because of its low toxicity, cost-effectiveness, and environmental friendliness. …”
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Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics by Xueming Li, Shankun Xu, Zhengfan Zhang, Zhouquan Yu, Zhidong Pan, Yujue Yang, Xubing Lu, Nengjie Huo

“…By further vertically stacking n-MoS2 with p-WSe2 transistors, the complementary metal-oxide-semiconductor (CMOS) inverters are achieved, demonstrating its application potential in high-density digital logical circuits. …”
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XPS study and electronic structure of non-doped and Cr+ ion implanted CuO thin films by Katarzyna Ungeheuer, Amelia E. Bocirnea, Konstanty W. Marszalek, Waldemar Tokarz, Denis A. Pikulski, Zbigniew Kąkol, Aurelian C. Galca

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Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test by Young-Min Ju, Dukyong Kim, Se-Min Lee, Heuisu Kim, Daewoong Lee, Yeon-Taek Hwang, Seung Hwan Lee, Hak-Sung Kim

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CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER by Teuku Andi Fadlly, Rachmad Almi Putra

“…Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO2 parallel in the Cu2O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO2 is an n-type semiconductor. …”
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Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches by J. A. Solovjov

“…The results obtained can be used to develop the structure and geometry of Schottky diodes with a metal – oxide – semiconductor trench structure with required electrical parameters.…”
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Surface modification of aluminum on a silicon chip by citric acid treatment by Moataz Mekawy, Kazuya Iida, Akitsu Shigetou, Jin Kawakita

“…This promising surface treatment method is expected to help enhance the removal of oxide layers formed on metal-based components.…”
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Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures by Takuma Kobayashi, Hiroki Fujimoto, Shinji Kamihata, Keiji Hachiken, Masahiro Hara, Heiji Watanabe

“…While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. …”
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Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area by ZHANG Dahua, MA Liang, ZHANG Zhonghua, TAN Canjian, LIU Guoyou

“…Based on the “U” shape enhanced double diffused metal oxide semiconductor (DMOS+) planar gate cell structure, enhanced controllable punch through (CPT+) and junction termination extension structure, a strong turn-off current capability and wide short circuit safe operation area 4 500 V IGBT chip was developed with optimizing the carrier stored layer, the buffer layer and the collector structure, low on-state loss. …”
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IGBT Overcurrent Capabilities in Resonant Circuits by Basil Mohammed Al-Hadithi, Miguel Jimenez

“…The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. …”
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Region‐Selective Growth of Cu2O Shell on Gold Nanoprisms by Ziyoda Ganieva, Dávid Kovács, Zoltán Osváth, Dániel Zámbó, András Deák

“…Abstract Structural control in metal/semiconductor multicomponent nanoparticles can lead to advanced functional properties, as optoelectronic processes and accessibility (e.g., by charge carriers or molecules) of the different components can be simultaneously tailored. …”
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Proactive Multisensory Solution for Mitigating Thermal Runaway Risks in Li-Ion Batteries by U. S. Fiadosenka, Linxi Dong, Chenxi Yue, G. G. Gorokh

“…The system integrates three types of sensors: a capacitive pressure sensor, a gas sensor based on a metal oxide semiconductor, and a platinum temperature sensor. …”
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Enhancing ferroelectric stability: wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices by Jingxuan Li, Shiqing Deng, Liyang Ma, Yangyang Si, Chao Zhou, Kefan Wang, Sizhe Huang, Jiyuan Yang, Yunlong Tang, Yu-Chieh Ku, Chang-Yang Kuo, Yijie Li, Sujit Das, Shi Liu, Zuhuang Chen

“…Abstract The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. …”
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