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Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Published 2025-01-01“…Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based devices is investigated. Among devices with different La/Al ratios, the Al and La co‐doped hafnium oxide (HfAlAO) device with 4.2% Al and 2.17% La exhibited the excellent remanent polarization and thermostability. …”
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Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide
Published 2013-01-01“…The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. …”
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Ferroelectric memory: state-of-the-art manufacturing and research
Published 2020-10-01Get full text
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Engineering the Mechanics and Thermodynamics of Ti<sub>3</sub>AlC<sub>2</sub>, Hf<sub>3</sub>AlC<sub>2</sub>, Hf<sub>3</sub>GaC<sub>2</sub>, (ZrHf)<sub>3</sub>AlC<sub>2</sub>, and...
Published 2025-01-01“…This study investigated Ti<sub>3</sub>AlC<sub>2</sub> alloyed with nitrogen, gallium, hafnium, and zirconium with the aim of achieving better mechanical and thermal performances. …”
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Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
Published 2025-02-01Get full text
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