In-core thermal and fast neutron measurements with 4H-SiC P+N junction diodes in the JSI TRIGA Mark II research reactor by Valero Valentin, Ottaviani Laurent, Lyoussi Abdallah, Destouches Christophe, Radulović Vladimir, Snoj Luka, Volte Adrien, Carette Michel, Reynard-Carette Christelle

“…These in-core measurements were done by using two types of diodes. One with a Neutron Converter Layer (NCL) of Boron-10 for thermal neutron detection, and the other one without NCL in order to discriminate thermal and fast neutrons by studying 10B reaction versus scattering. …”
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Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach by A Al-Sayed, Miad Ali Siddiq, Elsayed Elgazzar

“…The ${\rm{C}}/{\rm{G}}-{\rm{V}}$ and ${{\rm{R}}}_{{\rm{s}}}-{\rm{V}}$ measurements were executed over a wide frequency range, indicating the significant impact of trapped centers at interfacial layers on capacitance, conductance, and series resistance characteristics. …”
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Few‐Layer Organic Crystalline van der Waals Heterojunctions for Ultrafast UV Phototransistors by Jianhang Guo, Sai Jiang, Mengjiao Pei, Yanling Xiao, Bowen Zhang, Qijing Wang, Ying Zhu, Hengyuan Wang, Jiansheng Jie, Xinran Wang, Yi Shi, Yun Li

“…Here, organic UV phototransistors are constructed using few‐layer organic crystalline van der Waals (vdW) heterojunctions as the photoactive layers. …”
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Impact of Cetyl-Containing Ionic Liquids on Metal Halide Perovskite Structure and Photoluminescence by Maegyn A. Grubbs, Roberto Gonzalez-Rodriguez, Sergei V. Dzyuba, Benjamin G. Janesko, Jeffery L. Coffer

“…Proof-of-concept device fabrication is demonstrated for the case of a light emitting diode (LED) with the IL present in the emissive perovskite layer.…”
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Graphene Monolayer Nanomesh Structures and Their Applications in Electromagnetic Energy Harvesting for Solving the Matching Conundrum of Rectennas by Mircea Dragoman, Adrian Dinescu, Martino Aldrigo, Daniela Dragoman, Elaheh Mohebbi, Eleonora Pavoni, Emiliano Laudadio

“…In this paper, we investigate various graphene monolayer nanomesh structures (diodes) formed only by nanoholes, with a diameter of just 20 nm and etched from the graphene layer in different shapes (such as rhombus, bow tie, rectangle, trapezoid, and triangle), and their electrical properties targeting electromagnetic energy harvesting applications. …”
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Optimization of CuO_x/Ga₂O₃ Heterojunction Diodes for High-Voltage Power Electronics by Xiaohui Wang, Mujun Li, Minghao He, Honghao Lu, Chun-Zhang Chen, Yang Jiang, Kangyao Wen, Fangzhou Du, Yi Zhang, Chenkai Deng, Zilong Xiong, Haozhe Yu, Qing Wang, Hongyu Yu

“…This study optimizes the CuO_x/Ga₂O₃ heterojunction diodes (HJDs) by tailoring the structural parameters of CuO_x layers. …”
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Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm by Hongguang Yu, Chengao Yang, Yihang Chen, Jianmei Shi, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Enquan Zhang, Yu Zhang, Hao Tan, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu

“…Antimonide laser diodes, with their high performance above room temperature, exhibit significant potential for widespread applications in the mid-infrared spectral region. …”
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A compact frequency reconfigurable beam switching antenna based on a single‐layer FSS by Guang Li, Yangyang Ye, Fushun Zhang

“…Abstract A compact frequency reconfigurable beam switching antenna based on a single‐layer frequency selective face (FSS) is proposed in this paper. …”
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The extremely efficient and luminous-thermal-stable red phosphor based on new layered and rigid phosphate by Rong-Rong Wang, Jing Zhang, Yi-Jia Liu, Gui-Hua Li, Ge-Mei Cai

“…In this work, inherent layered CaIn2(P2O7)2 (CIP124) phosphate with different M1 and M2 sites for Ca/In co-occupying was discovered. …”
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In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs by Yizhen Zheng, Xing Lin, Jiongzhao Li, Jianan Chen, Wenhao Wu, Zixuan Song, Yuan Gao, Zhuang Hu, Huifeng Wang, Zikang Ye, Haiyan Qin, Xiaogang Peng

“…Abstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. …”
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Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers by Qirong Yao, Jae Whan Park, Choongjae Won, Sang‐Wook Cheong, Han Woong Yeom

“…Abstract Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high‐frequency and low‐power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. …”
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Micrometer-scale indirect photopatterning of RGB OLED emissive layers in single phase network structure by Seunghan Lee, Hyobin Ham, Shahid Ameen, Byung Hak Jhun, SeungHwan Roh, Hyeono Yee, Chang Hyeok Lim, Yuchan Heo, Hyukmin Kweon, Dongheon Han, Do Hwan Kim, Youngmin You, BongSoo Kim, Moon Sung Kang

“…Abstract Organic light-emitting diodes (OLEDs) used in virtual and augmented reality displays require micrometer-scale red-green-blue (RGB) pixel patterns in the emissive layer (EML). …”
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Angular Color Uniformity Enhancement for Color-Mixed LEDs by Introducing a Diffusing Coating Layer by Xin Zhu, Guangxu Wang, Xin Luo, Jianli Zhang, Junlin Liu, Xing Guo

“…In this study, a simple and low-cost method is proposed to enhance angular color uniformity (ACU) of color-mixed light-emitting diodes (cm-LEDs) by introducing a diffuse coating layer. …”
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A Transmission-Type Testing System for Measuring Optical Characteristics of Phosphors for Remote-Phosphor-Based White LEDs by Sijia Dang, Ziquan Guo, Weilin Huang, Yulin Gao, Yijun Lu, Yue Lin, Tienmo Shih, Lihong Zhu, Hongli Lu, Zhong Chen

“…In this paper, we have proposed a transmission-type testing system for determining optical characteristics of remote-phosphor plates in white light-emitting diodes (WLEDs). A comparative analysis between the proposed system and a traditional reflection-type system has also been conducted. …”
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Phosphorescent PdII–PdII Emitter‐Based Red OLEDs with an EQEmax of 20.52% by Lige Qiao, Xiangjun Kong, Kechun Li, Lequn Yuan, Yunjun Shen, Yuzhen Zhang, Liang Zhou

“…The crystalline data of 2 and 3 reveal complex double‐layer structures, with Pd–Pd distances of 2.8690(9) Å and 2.8584(17) Å, respectively. …”
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Inkjet printing of amorphous indium aluminum oxide active layers for high-performance thin-film transistors by Jiameng Kang, Kai Wang

“…Indium aluminum oxide (IAO) active layers were fabricated at relative low post-annealing temperature and shown a n-type semiconductor behavior. …”
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Effect of Interlayer on Doped Organic p–n Heterojunction Charge Generation Layers Using Impedance Spectroscopy by Somi Park, Akeem Raji, So‐Young Boo, Eun‐Jeong Jang, Akpeko Gasonoo, Jaeyong Park, Sungmin Kwon, Jonghee Lee, Jae‐Hyun Lee

“…Abstract Tandem organic light‐emitting diodes (OLEDs) are two or more emitting units that are connected in series with charge generation layer(s) (CGLs). …”
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Influence of MoO3’s blend in hole transporting layer on the performance of Alq3-based OLEDs by Yukang Zhao, Jiangsen Su, Wenjing Zou, Youzhi Wu, Cairong Zhang, Ming Shao

“…MoO3 was introduced in a typical hole transporting material N,N’-diphenyl-N,N’-bis(1-naphthyl) (1,1’-biphenyl)-4,4’diamine (NPB) to improve the performance of tris-(8-hydroxyquinoline) aluminum (Alq3) based organic light emitting diodes (OLEDs). It is found that MoO3 in NPB layer has a significant quenching effect on the electroluminescence of the device, although the current density-voltage characteristics of the devices is improved. …”
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Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application by Makram A. Fakhri, Evan T. Salim, Marwah R. Ketab, Haneen D. Jabbar, Omar A. Ibrahim, Ahmad S. Azzahrani, Mohammed Jalal AbdulRazzaq, Raid A. Ismail, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath

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Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure by Jau Yang Wu, Chun-Hsien Liu

“…We have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design without requiring any additional customized well layers. …”
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