Performance Characteristics of the Battery-Operated Silicon PIN Diode Detector with an Integrated Preamplifier and Data Acquisition Module for Fusion Particle Detection by Allan Xi Chen, Benjamin F. Sigal, John Martinis, Alfred YiuFai Wong, Alexander Gunn, Matthew Salazar, Nawar Abdalla, Kai-Jian Xiao

“…A charge-sensitive preamplifier (CSP) is mounted on the backside of the detector’s four-layer PCB and powered by two ±3 V lithium batteries (A123). …”
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High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes by Zhiheng Quan, Duc V. Dinh, Silvino Presa, Brendan Roycroft, Ann Foley, Mahbub Akhter, Donagh O'Mahony, Pleun P. Maaskant, Marian Caliebe, Ferdinand Scholz, Peter J. Parbrook, Brian Corbett

“…Freestanding semipolar (11&#x2013;22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula>- thick GaN layer grown on a patterned (10&#x2013;12) <inline-formula> <tex-math notation="LaTeX">$r$</tex-math></inline-formula>- plane sapphire substrate (PSS). …”
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Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications by Sana Nasir, Gul Hassan, Habib Ahmad

“…For an intrinsic layer thickness of 0.5 µm, the best trade-off between specific on-resistance and breakdown voltage is achieved at 1.2 μm spacing for Gallium Nitride-based diodes, yielding a specific on-resistance of 9.93 × 10−3 mΩ cm2, a breakdown voltage of 185.72 V, a critical electric field of 3.75 MV/cm, and a Baliga’s Figure of Merit of 3.47 GW/cm2. …”
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CALCULATION OF ELASTICALLY STRESSED QUANTUM WELLS HETEROSTRUCTURE AlXGaYIn1-X-YAs/InP FOR EFFICIENT DIODE LASERS by V. N. Svetogorov, R. Kh. Akchurin, A. A. Marmalyuk, M. A. Ladugin, I. V. Yarotskaya

“…The compositions of epitaxial layers forming quantum-well heterostructures AlxGayIn1-x-yAs / InP for laser diodes with the radiation wavelength of 1.55 μm are calculated. …”
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Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes by M. Siva Pratap Reddy, B. Prasanna Lakshmi, A. Ashok Kumar, V. Rajagopal Reddy

“…The I−V characteristics confirmed that the distribution of Nss, Rs and interfacial layer are important parameters that influence the electrical characteristics of MIS Schottky diodes.…”
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Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment by Woong Kwon, Yuta Itoh, Atsushi Tanaka, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

“…A vertical GaN p–n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. …”
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Chiral Perturbation Strategies for Circularly Polarized Thermally Activated Delayed-Fluorescence Small Molecules: Progress in the Application of Organic Light-Emitting Diodes by Tianwen Fan, Linxian Xu, Hao Tang, Lingyun Wang, Derong Cao

“…However, when the light signal generated by the OLED emissive layer passes through the polarizer, approximately 50% of the light energy is inevitably lost. …”
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Three-Dimensional Numerical Study on the Efficiency Droop in InGaN&#x002F;GaN Light-Emitting Diodes by Quoc-Hung Pham, Jyh-Chen Chen, Huy-Bich Nguyen

“…The efficiency droop characteristics of single quantum well (SQW) InGaN&#x002F;GaN light-emitting diodes (LEDs) including the phase-space filling (PSF) effect are predicted by a three-dimensional (3-D) numerical simulation. …”
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Degradation Properties of Organic Light‐Emitting Diodes with Modified Interface Charge Density via Dipolar Doping Studied by Displacement Current Measurement by Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, Yutaka Noguchi

“…Abstract Accumulated charges at the interfaces of organic light‐emitting diodes (OLEDs) often induce exciton quenching and lead to device degradation. …”
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A Power-Type Single GaN-Based Blue LED With Improved Linearity for 3 Gb/s Free-Space VLC Without Pre-equalization by Zhenkun Sun, Dongdong Teng, Lilin Liu, Xingxing Huang, Xiangying Zhang, Kun Sun, Yiguang Wang, Nan Chi, Gang Wang

Subjects: “…Aluminum-doped zinc oxide transparent current spreading layer (AZO-TCL)…”
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Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation by A. Y. Polyakov, L. A. Alexanyan, I. V. Schemerov, A. A. Vasilev, A. V. Chernykh, Anton Ivanov, Nadezhda Talnishnikh, Anton Chernyakov, A. L. Zakgeim, N. M. Shmidt, P. B. Lagov, A. S. Doroshkevich, R. Sh. Isayev, Yu. S. Pavlov, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

“…Point defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs) by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and luminescent characteristics. …”
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GaN-Based Cyan Light-Emitting Diode with up to 1-GHz Bandwidth for High-Speed Transmission Over SI-POF by Juri Vinogradov, Roman Kruglov, Rainer Engelbrecht, Olaf Ziemann, Jinn-Kong Sheu, Kai-Lun Chi, Jhih-Min Wun, Jin-Wei Shi

“…We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire substrate for use as a light source for plastic optical fiber (POF) communications with the central wavelength at 500&#x00A0;nm. …”
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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes by J. Lang, F. J. Xu, Y. H. Sun, N. Zhang, J. M. Wang, B. Y. Liu, L. B. Wang, N. Xie, X. Z. Fang, X. N. Kang, Z. X. Qin, X. L. Yang, X. Q. Wang, W. K. Ge, B. Shen

“…Carrier velocity modulation by asymmetrical concave quantum barriers to improve the performance of AlGaN-based deep-ultraviolet light emitting diodes has been investigated. The concave structure is realized by inserting a low Al composition AlGaN layer in the barrier, and thus forming a concave region on energy band. …”
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Light Extraction Efficiency of GaN-Based Micro-Scale Light-Emitting Diodes Investigated Using Finite-Difference Time-Domain Simulation by Han-Youl Ryu, Jeongsang Pyo, Hyun Yeol Ryu

“…We conducted a systematic investigation of the light extraction efficiency (LEE) of GaN-based vertical micro-scale light-emitting diode (&#x03BC;-LED) structures using three-dimensional finite-difference time-domain (FDTD) simulations. …”
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Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm² by Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau

“…The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>-thick drift layer, leading to a Baliga&#x2019;s figure of merit (BFOM) of 2.89 GW/cm2. …”
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Dual-laser powder bed fusion using 450 nm diode area melting and 1064 nm galvo-scanning fiber laser sources by H. Caglar, A. Aydin, I.T. Gulenc, K. Groom, K. Mumtaz

“…Unlike conventional PBF-LB systems that employ a single laser type, this dual-laser setup integrates a traversing Diode Area Melting (DAM) laser head with multiple 450 nm diode lasers (4 W each) and a traditional high-power (200 W) 1064 nm fiber-laser. …”
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Bar Adsorbent Microextraction with Carbon-Based Sorbent Layers for the Identification of Pharmaceutic Substances by S. Thenmozhi, V. Gowri, K. S. Vinayaka, Ravindra Pratap Singh, V. M. Vel, Kareem Yusuf, Ahmed muteb Aljuwayid, Md Ataul Islam, Abdi Diriba

“…Thirteen carbon materials were tested as sorbent layers in bar adsorbent microextraction (BAμE) to monitor hint amounts of 10 common pharmaceutical compounds (PhCs) in surface and groundwater matrices such as surface and groundwater, saltwater, spring water, and sewage. …”
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Momentum-resolved fingerprint of Mottness in layer-dimerized Nb3Br8 by Mihir Date, Francesco Petocchi, Yun Yen, Jonas A. Krieger, Banabir Pal, Vicky Hasse, Emily C. McFarlane, Chris Körner, Jiho Yoon, Matthew D. Watson, Vladimir N. Strocov, Yuanfeng Xu, Ilya Kostanovski, Mazhar N. Ali, Sailong Ju, Nicholas C. Plumb, Michael A. Sentef, Georg Woltersdorf, Michael Schüler, Philipp Werner, Claudia Felser, Stuart S. P. Parkin, Niels B. M. Schröter

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Effect of High Pressure Sodium and Light-Emitting Diode Lamps’ Supplementary Lighting and Diffusion Glass on Growth, Yield, and Fruit Quality of Pink Tomato by Katarzyna Kowalczyk, Małgorzata Mirgos, Anna Geszprych, Jarosław Przybył, Marzena Sujkowska-Rybkowska, Wojciech Borucki, Stanisław Kalisz, Jerzy Jonczak, Anna Sobczak-Samburska, Małgorzata Kunka, Janina Gajc-Wolska

“…In this study, for first time, the efficiency of the yield and fruit quality of the pink tomato cultivar ‘Tomimaru Muchoo’ was studied in hydroponic cultivation with top and interlighting with LEDs (light-emitting diodes) and diffusion glass (<i>DGlass</i>) to cover the glasshouse roof (LED+LED+<i>DGlass</i>). …”
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Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes by Xiaoli Ji, Jianchang Yan, Yanan Guo, Lili Sun, Tongbo Wei, Yun Zhang, Junxi Wang, Fuhua Yang, Jinmin Li

“…In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the same value as that of the electron-blocking layer accompanied with composition-graded p-AlGaN layer, is proposed to reduce electron leakage. …”
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