Optimization of Illumination Performance of Trichromatic White Light-Emitting Diode and Characterization of Its Modulation Bandwidth for Communication Applications by Hua Xiao, Xiangtian Xiao, Kai Wang, Rui Wang, Bin Xie, Kin Seng Chiang

“…We study a trichromatic white light-emitting diode (WLED) system that consists of a blue LED covered with layers of red emissive CdSe/ZnS quantum dots (QDs) and yellow emissive YAG:Ce^3+ phosphors. …”
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Relation Between Thickness and TFTs Properties of HfO₂ Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition by Qizhen Chen, Wanqiang Fu, Jing Han, Xiaoying Zhang, Shui-Yang Lien

“…The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. …”
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The Characteristics of the pin-Structure with a Discrete Metallic Surface i-Region by A. A. Danilenko, A. D. Ivanov, V. L. Ivanov, V. V. Marochkin, M. N. Ivanovich, P. V. Vsevolodovich

“…A method for correcting of the characteristics of the irradiated pin-diode to the initial characteristics was proposed. …”
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Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening by Yiting Liu, Yingying Sun, Xiaohan Yan, Bo Li, Lei Wang, Jianshun Li, Jiahui Sun, Yaqi Guo, Weipeng Liu, Binbin Hu, Qingli Lin, Fengjia Fan, Huaibin Shen

“…Here, we introduce “giant” fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs. The synthesized CdZnSe-based QDs reveal a decreased ground-state band splitting, shallow valence band maximum, and improved quasi-Fermi level splitting, which effectively flatten the energy landscape between the QD layer and hole transport layer. …”
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1,550-nm photonic crystal surface-emitting laser diode fabricated by single deep air-hole etch by Kim Myeongeun, Song Ye-Seong, Jeong Lakjong, Lee Tae-Yun, Choi Hyo Seok, Kim In, Lee Myungjae, Jeon Heonsu

“…In this study, we introduce a simpler method for fabricating PCSELs that requires only a single dry-etch run on any standard edge-emitting laser diode epistructure. The key challenge of creating an array of PhC air holes deep enough to reach the waveguide layer is addressed through high-temperature, high-plasma-density dry etching. …”
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Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays by Hyunkoo Lee, Hyunsu Cho, Chun-Won Byun, Chan-Mo Kang, Jun-Han Han, Jeong-Ik Lee, Hokwon Kim, Jeong Hwan Lee, Minseok Kim, Nam Sung Cho

“…We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (Al)/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. …”
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Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission by Desui Chen, Aleksandr A. Sergeev, Nan Zhang, Lingyi Ke, Ye Wu, Bing Tang, Chun Ki Tao, Haochen Liu, Guangruixing Zou, Zhaohua Zhu, Yidan An, Yun Li, Arsenii Portniagin, Kseniia A. Sergeeva, Kam Sing Wong, Hin-Lap Yip, Andrey L. Rogach

“…Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010 cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. …”
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Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure by Shucheng Chu, Hirofumi Kan

“…Compared with a p-Si/n-Si diode, light emission from a p-Si/SiO2/n-Si diode by current injection via direct tunneling is enhanced by more than 3 orders of magnitude. …”
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Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators by Lung-Chien Chen, Chih-Hung Hsu, Xiuyu Zhang, Jia-Ren Wu

“…The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.…”
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Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction by Zhuang Zhao, Yang Liu, Peixian Li, Xiaowei Zhou, Bo Yang, Yingru Xiang, Junchun Bai

“…In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ. …”
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On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters by Feifei Qin, Xueyao Lu, Xiaoxuan Wang, Chunxiang Guo, Jiaqi Wu, Xuefeng Fan, Mingming Jiang, Peng Wan, Junfeng Lu, Yongjin Wang, Gangyi Zhu

“…Experimental results indicate that the strain architecture of the multi-layer materials is the key principle for the self-warped device. …”
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Enhancing Light Extraction Efficiency of Vertical Emission of AlGaN Nanowire Light Emitting Diodes With Photonic Crystal by Pengwei Du, Zhiyuan Cheng

“…AlGaN alloys have been widely used to make ultraviolet light-emitting diodes (UV-LEDs) because its energy bandgap covers 200–360 nm wavelength range. …”
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Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications by Chia-Lung Tsai, Ying-Chang Li, Yi-Chen Lu, Sheng-Hsiung Chang

“…Visible light communications with InGaN-based light-emitting diodes (LEDs) grown on large-diameter (6-inch) and cost-effective Si (111) substrates are investigated experimentally. …”
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Avalanche Multiplication in Two-Dimensional Layered Materials: Principles and Applications by Zhangxinyu Zhou, Mengyang Kang, Yueyue Fang, Piotr Martyniuk, Hailu Wang

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Enhancement of Electro-Optical Characteristics in GaN-Based Ultraviolet Laser Diodes Through Upper Optical Confinement Structure Design by Zhiwei Li, Jing Yang, Lina Yu, Linjun Sun, Min Wu, Weijun Li

“…Two series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved. …”
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AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters by M. Benhaliliba, Y.S. Ocak, H. Mokhtari, T. Kiliçoglu

“…Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0.28 μm.…”
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Morphological and Interfacial Engineering with a Surfactant Additive Toward High‐Performance Blade‐Coated Quantum Dot Light‐Emitting Diodes by Wei‐Zhi Liu, Hong‐Wei Duan, Shu‐Guang Meng, Dong‐Ying Zhou, Liang‐Sheng Liao

“…Abstract The development of scalable and cost‐effective solution processes for large‐area quantum light‐emitting diodes (QLEDs) remains a pressing challenge. In this work, the blade‐coating process is explored for fabricating bottom‐emitting QLEDs using a poly(3,4‐ ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) layer modified with methanol (MeOH) and polyethylene glycol (PEG). …”
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Improved vacuum-evaporated blue perovskite light-emitting diodes with phenethylammonium chloride and guanidinium bromide synergistic post-processing modification by Liang Sun, Xiping He, Zhiyuan He, Feihu Zhang, Chencheng Peng, Ben Chen, Runda Guo, Lei Wang

“…To minimize the degradation of film quality caused by PEACl treatment, a layer of guanidinium bromide (GABr) is vacuum evaporated on top of PEACl treatment to further improve the quality of emitting layer. …”
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Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes by Yan Ren, Yongtao Yu, Shengze Zhou, Chao Pang, Yinle Li, Zhifeng Lei, Hong Zhang, Zhihong Feng, Xubo Song, Honghui Liu, Yongli Lou, Yiqiang Ni

“…GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. …”
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Electrical Transport Characteristics of Pd/V/N-InP Schottky Diode From I-V-T and C-V-T Measurements by S. Sankar Naik, V. Rajagopal Reddy

“…The transition metal palladium (Pd) is used as a second contact layer because it has high work function, it reacts with InP at low temperatures and improved contact morphology. …”
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