Misfit layered superconductor (PbSe)1.14(NbSe2)3 with possible layer-selective FFLO state by Yuki M. Itahashi, Yamato Nohara, Michiya Chazono, Hideki Matsuoka, Koichiro Arioka, Tetsuya Nomoto, Yoshimitsu Kohama, Youichi Yanase, Yoshihiro Iwasa, Kaya Kobayashi

“…Bulk 2D superconductors, with superconducting layers separated by non-superconducting layers, offer a unique opportunity to break this limit. …”
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Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology by Chih-Yang Huang, Xin-Ying Tsai, Fu-Gow Tarntair, Anoop Kumar Singh, Shao-Hui Hsu, Dong-Sing Wuu, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng

“…A 600 nm thick undoped β-Ga2O3 epitaxial layer was grown by metalorganic chemical vapor deposition at 875 °C. …”
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Enhancing the rectification effect of hydrogel-based stretchable ionic diodes through incorporating cations with high valence by Pengfei Xu, Xia Wu, Zefang Zhang, Peng Pan, Xinyu Liu

“…However, their relatively low rectification ratio hinders their electrical performance, necessitating effective strategies to enhance the rectification effect of stretchable ionic diodes. Here, we propose a method to enhance the rectification effect of hydrogel-based stretchable ionic diodes by incorporating high-valence cations into the P-type hydrogel layer. …”
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Strain-engineered light emitting diodes: a pathway to enhanced radiative efficiency and tunable optoelectronic performance by C. K. Maiti, Sanghamitra Das, Devika Jena, Diana Pradhan, Subhashree Choudhury, Taraprasanna Dash

“…Strain engineering has emerged as a key enabler for modulating the band structure, enhancing carrier confinement, and tailoring emission wavelengths in light-emitting diodes. This work synthesizes recent advances highlighting the critical role of lattice mismatch-induced strain, strained-layer superlattices, quantum dots, and nanowire geometries in optimizing radiative efficiency and tunability in III-V and wide bandgap LEDs. …”
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Enhanced Output Power of Light-Emitting Diodes With Embedded Air-Gap Photonic Crystals by Nanosphere Lithography by Chengxiao Du, Wanrong Zhang, Tongbo Wei, Xiaoli Ji, Jinmin Li, Chong Geng, Qingfeng Yan

“…Large-scale two-dimensional air-gap photonic crystals (PhCs) were embedded in an n-type GaN layer to enhance the light emission of GaN-based light-emitting diodes (LEDs). …”
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Enhanced Light Extraction of High-Voltage Light Emitting Diodes Using a Sidewall Chamfer Structure by Ping-Chen Wu, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu

“…High-voltage light-emitting diodes (HV-LEDs) were prepared with 4 × 2 microcells. …”
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Evaluation of a silicon carbide P–N diode for thermal neutron detection in a radiotherapy LINAC by Martín Pérez, Felipe Zamorano, Celeste Fleta, Carles Muñoz-Montplet, Diego Jurado-Bruggeman, Marcio Jiménez, Pablo Guardia, Gina Grabulosa-Morera, Roger Morales-Pérez, Gemma Rius, Philippe Godignon, Giulio Pellegrini, Consuelo Guardiola

“…Beyond medical applications, the presented detectors show potential for neutron dosimetry, radiation monitoring, nuclear safety, and scientific research. The SiC diode active detection layer is less than 30 µm thick, and provides excellent gamma rejection ( $$5\times 10^{-8}$$ ), allowing discrimination of neutrons-induced events in mixed radiation fields. …”
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Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes by S. Çetinkaya, H. A. Çetinkara, F. Bayansal, S. Kahraman

“…Deposited CuO layers were characterized by SEM and XRD techniques. …”
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Modeling of Optical Processes in Thin-Film IR Light-Emitting Diode Based on Colloidal PbS Quantum Dots by U. Y. Turavets

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The dentin surface of the root canal comparative characteristics during decontamination with a diode laser, depending on the irrigation solution

“…With the help of scanning electron microscopy, the root canals dentin surface of the removed teeth was examined after treatment with a diode laser. As a result, it was found that the diode laser using does not damage the dentin surface, facilitates the lubricated layer removal, improves the conditions for the adhesion of syllables and, accordingly, improves the endodontic treatment quality.…”
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Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities by Artem Bercha, Mikołaj Chlipała, Mateusz Hajdel, Grzegorz Muzioł, Marcin Siekacz, Henryk Turski, Witold Trzeciakowski

“…We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In_0.17Ga_0.83N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6 and 15 nm well widths and two diodes with inverted <i>pin</i> layer ordering (due to the tunnel junction grown before the <i>pin</i> structure) also with 2.6 and 15 nm widths. …”
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Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode by Vibhor Kumar, J. Akhtar, Kulwant Singh, Anup Singh Maan

“…In this paper, the influence of temperature on breakdown characteristic of Ion Implanted edge terminated Co/n-Si Schottky Diode formed on n-Si epitaxial layer has been investigated by using SILVACO TCAD. …”
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A Cylindrical Tuber Encapsulant Geometry for Enhancing Optical Performance of Chip-on-Board Packaging Light-Emitting Diodes by Xingjian Yu, Bin Xie, Bofeng Shang, Qi Chen, Xiaobing Luo

“…Experimental results show that for the case that the encapsulation layer only consists of silicone, the proposed geometry enhances the light efficiency up to 63.1&#x0025;. …”
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Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs) deposited by spin coating by Ricardo Vera, Juan Carlos Salcedo-Reyes, Juan Pablo Cuéllar-Alvarado, Diana Rocío Pardo-Pardo, Henry Alberto Méndez-Pinzón, Beynor Antonio Páez-Sierra

“…A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. …”
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The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes by Yonghui Zhang, Ji Zhang, Yuxin Zheng, Ce Sun, Kangkai Tian, Chunshang Chu, Zi-Hui Zhang, Jay Guoxu Liu, Wengang Bi

“…However, for the flip-chip LED on PSS, both the total internal reflection and the surface plasmon polariton resonance absorption play a major role leading to LEE increasing as the thickness of SiO₂ layer increases. As a result, SiO₂ layer with a thickness of over one wavelength is better, because the energy of evanescent wave decays to sufficiently negligible when it reaches the Al metal.…”
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On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes by Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Hao-Chung Kuo

“…Moreover, the parasitic emission in the p-type hole injection layer is no longer observed thanks to the decreased electron leakage level.…”
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p‐Graphene/Quantum Dot/n‐GaAs Mixed‐Dimensional Heterostructure Junction for Ultrathin Light‐Emitting‐Diodes by Quang Nhat Dang Lung, Rafael Jumar Chu, Eungbeom Yeon, Yeonhwa Kim, May Angelu Madarang, Won Jun Choi, Daehwan Jung

“…Here, p‐type graphene/InAs quantum dot (QD)/n‐type GaAs mixed‐dimensional heterojunctions are demonstrated for 1.3 µm light‐emitting diodes (LEDs) by using the p‐graphene as an ultrathin hole injection layer. …”
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MICRODISPLAY STRUCTURES BASED ON ORGANIC GREEN LIGHT EMITTING DIODES USING THERMALLY ACTIVATED DELAYED FLUORESCENCE MATERIALS by O. A. Grachev, E. F. Kudryashova, N. N. Usov

“…Сomplete microdisplay element consists of а active matrix and OLED structure, which is a set of layers of low molecular weight organic materials. …”
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AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping by Jianjun Chang, Dunjun Chen, Junjun Xue, Kexiu Dong, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng

“…The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. …”
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Improved performance of lateral β-Ga2O3 Schottky barrier diodes by nitrogen thermal annealing by Yu-Ru Li, Anoop Kumar Singh, Yu-Cheng Kao, Dong-Sing Wuu, Ching-Lien Hsiao, Kenneth Järrendahl, Ray-Hua Horng

“…We report the growth of (2¯01)β-Ga2O3 ​epilayers on sapphire substrates using metalorganic chemical vapor deposition (MOCVD) and the fabrication of lateral Schottky barrier diodes (SBDs). Ti/Al/Ni/Au layers with respective thicknesses of 20/300/40/50 nm were deposited as the ohmic electrodes, followed by the deposition of 50/50 nm Ni/Au layers as the Schottky electrodes in lateral SBDs. …”
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