A novel configuration of reconfigurable bandpass filter based on varactor diodes by Mohamed Guermal, Jamal Zbitou, Mostafa Hefnawi, Fouad Aytouna

“…In terms of structural design, the bandpass filter employs a single-layer configuration, which houses the four resonators. …”
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Fermi-level-managed multi-barrier heterojunction diodes for terahertz detection by Iñigo Belio-Apaolaza, James Seddon, Cyril C. Renaud

“…The fermi-level-managed barrier diode (FMBD), an all-semiconductor InGaAs/InP heterobarrier diode originally conceived for direct THz detection, has the potential to overcome these challenges. …”
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Temperature Sensing Diode in InP-Based Photonic Integration Technology by Wenjing Tian, Bart Bas, Dylan Harmsen, Kevin Williams, Xaveer Leijtens

“…Two distinct sensors were developed using p-i-n diode junctions with different waveguide core layers, one composed of multiple quantum wells and the other of bulk indium gallium arsenide phosphide. …”
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Solution-Processed Organic Light-Emitting Diodes Using a Lamination Method by Dong-Heon Yoo, Cheol-Hee Moon

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Fabrication and characterization of Ag-BaF2/GaSb Schottky diode by Abdulsamee Fawzi Abdulaziz

“… The Ag-BaF2/GaSb Schottky diode measurement has been investigated by using voltage versus current (I-V) at different temperatures, voltage versus capacitance (C-V) and hotoelectric measurements on n-type GaSb carrier per cm-3, Current – voltage measurement were used to study the interface layer. …”
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Top Emission Organic Light Emitting Diodes Fabricated on Stainless Steel Foil by Fuh-Shyang Juang, Yu-Hsin Tuan, Hong-Kai Chen, Min-Chieh Lin, Hung-Lun Lin, Jun-Lin Huang

“…The device optimizations included adding a gold layer (3 nm) to the aluminum anode, which increased hole injection efficiency and improved luminance from 4.99 cd/m2 to 24.65 cd/m2 at 14 V when the hole transport layer (TAPC) thickness was reduced from 20 nm to 10 nm. …”
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An Improved PIN Diode Model Design for a Tunable Frequency Selective Absorber by Hanxiang Lin, Xiaoxing Fang

“…This new structure consists of four primary components: a frequency selective surface (FSS) layer, a dielectric substrate, an air spacer layer, and a metal substrate. …”
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Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes by Song Wang, Shihao Liu, Ting Wang, Jialin Bai, Jingyu Peng, Hanzhuang Zhang, Wenfa Xie, Wenyu Ji

“…An ideal electron transport layer should possess both high mobility and low carrier density. …”
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Mechanisms and Perspectives of Positive Ageing Effect in Quantum‐Dot Light‐Emitting Diodes by Song Wang, Bingyan Zhu, Jingyu Peng, Zhihui Kang, Xiaochun Chi, Rongmei Yu, Hanzhuang Zhang, Wenyu Ji

“…Abstract The widespread integration of ZnO nanoparticles (NPs) as the electron transport layer has yielded significant advancements in the performance of hybrid quantum dot light‐emitting diodes (QLEDs). …”
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Characteristic Evaluation of Organic Light-Emitting Diodes Prepared with Stamp Printing Technique by Apisit Chittawanij, Kitsakorn Locharoenrat

“…We have reported on a stamp printing technique that uses PET release film as a printing stamp to deposit TPBi thin film served as the electron transport layer of the organic light-emitting diodes. TPBi thin film was printed with a good uniformity and resolution. …”
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Calibration coefficients of epitaxial diodes used in diagnostic radiology and computed tomography beams by Josemary A. C. Gonçalves, Patrícia de Lara Antonio, Linda V. E. Caldas, Carmen C. Bueno

“…The diode, with an n-type epitaxial layer (50 µm) grown on a thick (300 µm) Czochralski silicon substrate, is directly connected to an electrometer Keithley 6517B in the photovoltaic mode and exposed to X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS. …”
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Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon by Evangelia Delli, Peter D. Hodgson, Eva Repiso, Adam P. Craig, Jonathan P. Hayton, Qi Lu, Andrew R. J. Marshall, Anthony Krier, Peter J. Carrington

“…This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. …”
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Quantifying Efficiency Roll‐Off Factors in Quantum‐Dot Light‐Emitting Diodes by Xianchang Yan, Xitong Zhu, Boning Wu, Yizheng Jin, Wenming Tian, Shengye Jin

“…Abstract The application of quantum‐dot light‐emitting diodes (QLEDs) is hindered by efficiency roll‐off at high current densities. …”
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Efficient and stable near-infrared InAs quantum dot light-emitting diodes by Binghan Li, Yu Wang, Jiancheng Zhang, Yaobo Li, Bo Li, Qingli Lin, Ruijia Sun, Fengjia Fan, Zaiping Zeng, Huaibin Shen, Botao Ji

“…The crosslinked hole-transport layers enhance hole transfer to the emitting layer for balanced carrier dynamics in quantum dot light-emitting diodes. …”
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Preparation of hybrid light-emitting diodes (OI-LED) based on  Carbon Nanoparticles by Hussein Riyadh Mohammed, Asama N. Naje

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Current instability phenomena in a tunnel diode and electron self-organization processes by L.V. Chirkova, K.T. Ermaganbetov, K.M. Makhanov, K.S. Rozhkova, E.T. Arinova, A. Kurmash

“…On the example of functioning of the tunnel diode the mechanism of formation of the concentrated instability in semiconductors resulting in N-shaped voltampere characteristic of the diode is considered. …”
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Enhanced Electroluminescence Efficiency in Si-Nanostructure-Based Silicon-Nitride Light-Emitting Diodes via H2 Plasma Treatment by Zhenxu Lin, Yi Zhang, Wenxing Zhang, Jie Song, Hongliang Li, Chao Song, Yanqing Guo, Rui Huang

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Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction by Danbei Wang, Bin Liu, Hongmei Zhang, Hong Zhao, Tao Tao, Zili Xie, Rong Zhang, Youdou Zheng

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High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging by Ziang Guo, Sergei Mistyuk, Arthur Carpenter, Charles E. Hunt

Subjects: “…P-I-N diodes…”
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SPECTRAL DISTRIBUTION OF SPONTANEOUS ELECTROLUMINESCENCE IN GREEN LIGHT EMITTING DIODES AT DIFFERENT EXCITATION LEVELS by D. S. Bobuchenko, D. S. Domanevskii, I. A. Khorunzhii, Yu. V. Trofimov, V. I. Tsvirko, R. D. Kakanakov

“…Metrological possibilities of a specialised measuring complex with which help electroluminescence spectra (EL) light-emitting diodes (LED) are received are studied. The analysis is carried out and forms of spectra of EL LED with a single quantum hole on the basis of model considering penetration into twodimensional active layer InGaN of electric field from barrier layers GaN adjoining to it and AlGaN are investigated. …”
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