Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes by Kingsley Egbo, William A. Callahan, Shahadat Sohel, Chris Chae, Brooks Tellekamp, Jinwoo Hwang, Andriy Zakutayev

“…This study investigates the long-term stability of Pt/β-Ga2O3 field-plated Schottky barrier diodes at high temperatures, with extended thermal cycling and soaking stress. …”
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Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer by Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden

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Light-Emission and Electricity-Generation Properties of Photovoltaic Organic Light-Emitting Diodes with Rubrene/DBP Light-Emission and Electron-Donating Layers by Mun Soo Choi, Ho-Nyeon Lee

“…We report the dependence of the characteristics of photovoltaic organic light-emitting diodes (PVOLEDs) on the composition of the light-emission and electron-donating layer (EL-EDL). 5,6,11,12-Tetraphenylnaphthacene (rubrene): dibenzo{[f,f′]-4,4′,7,7′-tetraphenyl}diindeno[1,2,3-cd:1′,2′,3′-lm]perylene (DBP) was used to form the EL-EDL, and C60 was used as an electron-accepting layer (EAL) material. …”
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Using Highly Functional Cr2O3 Interfacial Layer to Enhance the Electrical Performance of Au/InP Schottky Diodes by Sreedhar Gari Sai Krupa, Dandala Surya Reddy, Ambadi Lakshmi‐Narayana, Varra Rajagopal Reddy, Chintalapalle V. Ramana

“…Abstract Herein, the significant impact of the spin‐coated Cr2O3 interface layer on the electrical properties and performance characteristics of Au/undoped‐InP (Au/InP) Schottky diodes (SD) is reported. …”
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Analysis of Polarization-Dependent Light Extraction and Effect of Passivation Layer for 230-nm AlGaN Nanowire Light-Emitting Diodes by Yu Kee Ooi, Cheng Liu, Jing Zhang

“…This paper investigates the polarization-dependent light extraction efficiency (<inline-formula> <tex-math notation="LaTeX">$\eta _{\rm extraction}$</tex-math></inline-formula>) and the effect of passivation layer for AlGaN-based nanowire (NW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) emitted at 230 nm using three-dimensional finite-difference time-domain method. …”
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Altering the Optoelectronic Properties of the PEDOT:PSS Hole Transport Layer with Sodium Polystyrenesulfonate to Enhance the Efficiency and Stability of Perovskite Light-Emitting Diode by Susmita Mukherjee, Ashutosh Panigrahi, Ajay Perumal

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Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer by Yifan Yao, Toru Inatome, Ibraheem Aljarboua, Hanyu Bi, Julia Didziulis, Michael Iza, Mattanjah de Vries, Shuji Nakamura, Abdullah Almogbel, Steven P. DenBaars

“…We report a room-temperature ultraviolet-A (UV-A) stimulated emission from a multiple-quantum-well laser diode featuring a nano-porous bottom cladding layer on the GaN substrate. …”
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Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n+ Layer by Hongyuan Xu, Guangmiao Wan, Xu Wang, Xiaoliang Zhou, Jing Liu, Jinming Li, Lei Lu, Shengdong Zhang

“…In this letter, a high performance and large area feasible top-gate low-temperature polysilicon thin film transistor (LTPS TFT) technology is reported. The poly-Si active layer was formed by crystallizing the plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si) film using the blue laser diode anneal (BLDA) technique. …”
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Ultrastable and Highly Luminescent Quantum Dots Coating Highly Dense Protective Layers of Na‐Poly(Al‐O‐Si) Nanocomposites for Light‐Emitting Diodes by Chun‐Feng Lai, Chang‐Zhi Zhong, Yu‐Chun Lee

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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes by Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Xiang Li, Feng Liang, Wei Liu, Shuangtao Liu, Liqun Zhang, Hui Yang, Jian Zhang, Mo Li

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Semitransparent light-emitting diodes based on InP/ZnSeS/ZnS quantum dots with Al/Ag double metal layer as top electrode by Qun Wan, Changwei Yuan, Xinrong Liao, Mengda He, Long Kong, Liang Li

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Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications by Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Pierre Brosselard, Eric Frayssinet, Florian Bartoli, Yvon Cordier, Farid Medjdoub, Dominique Planson, Cyril Buttay

“…This work presents physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers and associated quasi-vertical Schottky Barrier Diodes (SBDs). …”
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Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping by Qianying Si, Hangyang Chen, Shuping Li, Shiqiang Lu, Junyong Kang

Subjects: “…superlattice p-type doping layer…”
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Ultrathin High‐Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface‐Grafted Poly(methacrylic acid) Matrix by Wojciech Wieczorek, Tomasz Mazur, Weronika Górka‐Kumik, Paweł Dąbczyński, Agnieszka Podborska, Andrzej Bernasik, Michał Szuwarzyński

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Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range by N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi

“…The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses. …”
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Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate by Changda Zheng, Li Wang, Chunlan Mo, Wenqing Fang, Fengyi Jiang

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Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer by Jun Wang, Tian Wang

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Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In_xAl_1-xAs Strain-Reducing Layers by Ruizhe Yao, Nicholas Weir, Chi-Sen Lee, Wei Guo

“…In this paper, broadband InAs quantum-dot (QD) superluminescent light-emitting diodes (SLEDs) are grown by molecular beam epitaxy, fabricated, and then characterized. …”
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Scanning Electron Microscopy analysis concerning the effect of 980 nm Diode Laser and Twin Kleen irrigant for the elimination of smear layer off the root canal wall by Aishwarya A. Kottur, Abdul Mujeeb, Ali A. Assiry, Mohammad Fareed, Shahabe Saquib Abullais, Niher Tabassum Snigdha, Vijay Bhavrao Desai, Mohmed Isaqali Karobari

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Preparation and performance optimization of bromine-based perovskite quantum dot light-emitting diodes by CHEN Jiamin, CUI Xiangqian, HU Lufeng, YE Zhixiang, WANG Ning, LI Bobo, QIU Mingxia

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