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101
Synthesis, Hirshfeld Surfaces and Characterization of Diethanolaminium 3,5-dinitrosalicylate single crystal for NLO application
Published 2025-01-01“…The optical studies suggest that the obtained crystal shows low absorption in the 450––750 nm region with 2.55 eV corresponding to direct bandgap. The crystal’s refractive index is calculated as 1.693. …”
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102
Gamma-Induced Transformations in PVC-Based Nanocomposites for Tailored Optical Properties
Published 2024-01-01“…This improvement is attributed to a reduction in the bandgap and increased light absorption induced by irradiation. …”
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103
Investigation into the stability of chemical doping and the structure of carbon nanotube
Published 2025-01-01“…This is because CNTs with small diameters have a wide bandgap and a high energy level of the conduction band, and chemical dopants with a stronger electron-donating ability are required to obtain stable n-type CNTs. …”
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104
Vanadium Pentoxide Nanoparticles Doped ZnO: Physicochemical, Optical, Dielectric, and Photocatalytic Properties
Published 2023-01-01“…A diffuse reflectance spectroscopic approach is described to determine the bandgap energy (Eg) of the samples. The dielectric and photocatalytic characteristics are also examined. …”
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105
Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications
Published 2009-01-01“…We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). …”
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106
Theoretical Study of One-Intermediate Band Quantum Dot Solar Cell
Published 2014-01-01“…Because the smaller energy photons than the bandgap energy can be used to promote charge carriers transfer to the conduction band and thereby the total output current increases while maintaining a large open circuit voltage. …”
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107
500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit
Published 2023-07-01“…Abstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. …”
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108
The Influence of Oxygen Substitution on the Optoelectronic Properties of ZnTe
Published 2016-01-01“…We also calculate the bandgap bowing parameter from our accurate bandgaps and resolve the existing controversy in this parameter.…”
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109
A Novel Elastic Metamaterial with Multiple Resonators for Vibration Suppression
Published 2021-01-01“…In this paper, two models of elastic metamaterial containing one and two resonators are proposed to obtain the bandgaps with the aim of providing broadband vibration suppression. …”
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110
Theoretical investigation of carbon monoxide oxidation on two-dimensional aluminum carbide
Published 2025-01-01“…Density of States (DOS) analysis highlighted that doping alters the electronic properties, with boron reducing the bandgap and nitrogen inducing localized states near the Fermi level. …”
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111
Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D
Published 2014-01-01“…The top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by the layer below, which increases the overall efficiency of the solar cell. …”
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112
In Situ Measurement of Local Hydrogen Production Rate by Bubble-Evolved Recording
Published 2013-01-01“…Hydrogen visibly bubbles during photocatalytic water splitting under illumination with above-bandgap radiation, which provides a direct measurement of local gas-evolving reaction rate. …”
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113
Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis
Published 2019-01-01“…Atomically thin materials such as semiconducting transition metal diselenide materials, like molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2), have received intensive interests in recent years due to their unique electronic structure, bandgap engineering, ambipolar behavior, and optical properties and have motivated investigations for the next-generation semiconducting electronic devices. …”
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114
Polyaniline Supported Ag-Doped ZnO Nanocomposite: Synthesis, Characterization, and Kinetics Study for Photocatalytic Degradation of Malachite Green
Published 2021-01-01“…XRD, UV-Vis, and FT-IR spectroscopy were employed to study the crystal size, bandgap energy, and bond structure of as-synthesized nanocomposites. …”
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115
First-principles investigation of Ra doping effects on structural, electronic, and optical properties of BaTiO3 perovskite for solar cell applications
Published 2025-01-01“…Using the generalized gradient approximation (GGA) based on the Perdew–Burke–Ernzerhof (PBE) approach, the bandgap energies of pure BaTiO _3 (indirect band 1.61691 eV) and RaTiO _3 (direct band 1.63612 eV) were determined. …”
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116
AgGaS<sub>2</sub> and Derivatives: Design, Synthesis, and Optical Properties
Published 2025-01-01“…Silver gallium sulfide (AgGaS<sub>2</sub>) is a ternary A<sup>(I)</sup>B<sup>(III)</sup>X<sup>(VI)</sup><sub>2</sub>-type semiconductor featuring a direct bandgap and high chemical stability. Structurally resembling diamond, AgGaS<sub>2</sub> has gained considerable attention as a highly promising material for nonlinear optical applications such as second harmonic generation and optical parametric oscillation. …”
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117
Synthesis and Characterization of Zinc Sulfide-Aluminium -Platinum Nanocomposites Produced by Coprecipitation Method
Published 2025-01-01“…The optical properties were assessed through UV spectroscopy, which showed that the ZnS nanocomposites displayed a prominent absorption peak in the 295-300 nm range, with the highest absorption at 299 nm, and a bandgap energy of 3.75 eV. This indicates a notable blue shift compared to the spectrum of bulk ZnS. …”
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118
The prediction of X2B6 monolayers with ultrahigh carrier mobility
Published 2025-01-01“…Interestingly, the K2B6 and Rb2B6 monolayers demonstrate a metallic band structure, while the Na2B6 monolayer is a semiconductor with an ultra-narrow bandgap only about 0.42 eV. Then, the ultra-high electron mobility in the Na2B6 monolayer is calculated as about 9942 cm2.V−1.s−1, and the excellent optical performance of the Na2B6 monolayer is also addressed. …”
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119
Anodized CuO Nanoflakes for the Antibacterial and Antifungal Applications
Published 2025-02-01“…UV–Vis spectroscopy obtained a bandgap ranging between 1.42 and 1.44 eV. The agar diffusion method was used for assessing the antibacterial and antifungal properties. …”
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120
Scanless laser waveform measurement in the near-infrared
Published 2025-01-01“…Extending the techniques to shorter wavelengths, however, is not feasible using silicon-based detectors with bandgaps in the near-infrared. Here, we demonstrate an all-optical sampling technique for near-infrared laser fields, wherein an intense fundamental field generates a sub-cycle gate through nonlinear excitation of a wide-bandgap crystal, in this case, ZnO, which can sample the electric field of a weak perturbing pulse. …”
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