Scrutinizing the untapped potential of emerging ABSe3 (A = Ca, Ba; B = Zr, Hf) chalcogenide perovskites solar cells by Dhineshkumar Srinivasan, Aruna-Devi Rasu Chettiar, Eupsy Navis Vincent Mercy, Latha Marasamy

“…Abstract ABS3chalcogenide perovskites (CPs) are emerging as promising alternatives to lead halide perovskites due to their unique properties. However, their bandgap exceeds the Shockley-Queisser limit. By substituting S with Se, the bandgap is significantly reduced, shifting it from the visible into the near-infrared region. …”
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Electronic, Structural, and Optical Properties of Zinc Blende and Wurtzite Cadmium Sulfide (CdS) Using Density Functional Theory by Teshome Gerbaba Edossa, Menberu Mengasha Woldemariam

“…Analysis of the results shows that LDA and GGA underestimate the bandgap due to their poor approximation of exchange-correlation functional. …”
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Target Detection Using Fused Unidentical Photonics-Based LFM Sub-Band Radar Signals With an Adaptive Feed Forward Network Equalizer by Bikash Nakarmi, S. M. Rezwanul Islam, Hum Nath Parajuli, Ikechi Augustine Ukaegbu, Aigerim Ashimbayeva, Carlo Molardi, T. D. Subash, Xiangchuan Wang, Shilong Pan

“…We demonstrate this using optical injection in a semiconductor laser to generate Ph-LFM signals at different IEEE X-KA radar sub-bands: 19.25–23.94 GHz and 24.06–28.31 GHz (bandgap 0.12 GHz), 19.69–23.06 GHz and 23.625–27 GHz (bandgap 0.56 GHz), and 8–11.5 GHz and 12.75–17 GHz (bandgap 1.25 GHz). …”
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Roles of doping in enhancing the performance of graphene/graphene-like semiconductors by Yuqi Zhou, Xinbo He, Mengyang Li

“…However, graphene is intrinsically a zero-bandgap material, limiting its development in the field of flexible nanoelectronics. …”
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Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells by Ming-Jer Jeng

“…To reduce a high barrier height, some graded layers with an energy bandgap between the energy bandgap of n-GaN and InxGa1−xN intrinsic layer can be inserted to the interface of n-GaN and InxGa1-xN layers. …”
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Structure dependent optical and conductive properties of HPMC:CoCl2 composites: A functional data analysis study by Gowtham G K, Thejas G. Urs

“…In addition, employing the tightly bound electron model, we detail the bandgap variation in these composites concerning the dopant concentration. …”
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Leaky Wave Array in Full Planar Substrate with EBG-Based Wave Guiding Channel by Linghui Kong, Sen Yan, Vladimir Volskiy, Binke Huang, Guy A. E Vandenbosch

“…The guiding channel is developed on the full planar dielectric substrate and aligned with electromagnetic bandgap (EBG) units. Since the bandgap of these mushroom-like units is calculated with a coverage of the channel working band, these units are of great importance on ensuring the transmission efficiency and eliminating the coupling effect between channels. …”
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Novel In Situ Fabrication of Fe-Doped Zinc Oxide/Tin Sulfide Heterostructures for Visible-Light-Driven Photocatalytic Degradation of Methylene Blue by Govinda Dharmana, Thirumala Rao Gurugubelli, Balaga Viswanadham, Babu Bathula, Kisoo Yoo

“…Additionally, absorption spectroscopy revealed a decrease in the energy bandgap with an increase in Fe content, and photoluminescence analysis demonstrated that the ZSF3 sample significantly reduced the rate of recombination of charge carriers. …”
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Ferromagnetic Nickel as a Sustainable Reducing Agent for Tin–Lead Mixed Perovskite in Single‐Junction and Tandem Solar Cells by Doyun Im, Passarut Boonmongkolras, Yeonghun Yun, Sung Woong Yang, Sunwoo Kim, Jungchul Yun, Rajendra Kumar Gunasekaran, You‐Hyun Seo, Nam Joong Jeon, Gill Sang Han, Sangwook Lee

“…The unique bandgap tunability of halide perovskites enables optimal tandem configurations of wide‐bandgap (WBG) and NBG subcells. …”
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Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

“…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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Design of Multijunction Photovoltaic Cells Optimized for Varied Atmospheric Conditions by C. Zhang, J. Gwamuri, R. Andrews, J. M. Pearce

“…Indium gallium nitride and other PV materials offer the opportunity for limited bandgap engineering to match spectra. The effects of atmospheric conditions such as aerosols, cloud cover, water vapor, and air mass have been shown to cause variations in spectral radiance that alters PV system performance due to both overrating and underrating. …”
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Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

“…Band structure calculations indicated that the lowest conduction band and highest valence band were evident at the G-point, demonstrating that rare-earth-element doping did not alter the material type of GaAs, which remained a direct-bandgap semiconductor. The bandgap of Sc-doped GaAs increased, whereas those of Y-, La-, Ce-, and Pr-doped GaAs decreased. …”
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First-Principles Calculation of Conductivity of Ce-C Codoped SnO2 Contacts by Can Ding, Zhenjiang Gao, Xing Hu, Zhao Yuan

“…When the elements are codoped, the enthalpy change is the largest, and the thermal stability is the best. It has the smallest bandgap, the most impurity energy levels, and the least energy required for electronic transitions. …”
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Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs by Jinglei Wang, Huimin Lu, Jianhua Ma, Yifan Zhu, Zihua Zhang, Tongjun Yu, Xuecheng Wei, Hua Yang, Jianping Wang

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Heterobimetallic Zn2+/Co2+ Monocarboxylates as Precursors for ZnO Microparticles Doped with Cobalt and its Photocatalytic Activity in Methyl Orange Oxidation by Hélder Inocêncio Ferreira Correa, Ralf Ricardo Ramalho Jr, Adhimar Flávio Oliveira, Fabio da Silva Lisboa

“…All particles ranged from 0.1 to 0.9 μm size, with a direct bandgap of 2.2 to 2.6 eV and an indirect bandgap of 0.25 to 1.70 eV. …”
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Electronic and Optical Properties of Cl-doped CH3NH3SnI3 Perovskite: A DFT Study by Laassouli Abdelmounaim, Moulaoui Lhouceine, Najim Abdelhafid, Archi Marouane, Karouchi Mohamed, Rahmani Khalid, Lachtioui Youssef, Bajjou Omar

“…We explore Cl doping concentrations of 8.33%, 16.66%, and 25%, analyzing the resulting changes in bandgap, density of states, and absorption coefficient. …”
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Investigation of Fe-Doped Graphitic Carbon Nitride-Silver Tungstate as a Ternary Visible Light Active Photocatalyst by Eid H. Alosaimi, Nadia Azeem, Noor Tahir, Asim Jilani, Muhammad Zahid, Salman. S. Alharthi, Javed Iqbal, Muhammad Yaseen, Zulfiqar Ahmad Rehan, Imran Shahid

“…Characterization analysis included SEM analysis, FTIR, XRD, XPS, and UV-Visible techniques to elucidate the morphology and chemical structuring of the as-prepared heterostructure. The bandgap energies were assessed using the Tauc plot. …”
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Ab Initio Study of Optoelectronic and Magnetic Properties of Ternary Chromium Chalcogenides by Marc Ong, Mahmoud Hammouri, Radi A. Jishi

“…Electronic band structure calculations indicate that these compounds are either metallic or semiconductors with relatively low bandgap energies. The large optical absorption coefficients, predicted by our calculations, suggest that some of these compounds may be useful as light harvesters in solar cells or as infrared detectors.…”
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A Compact Low-Permittivity Dual-Layer EBG Structure for Mutual Coupling Reduction by A. Azarbar, J. Ghalibafan

“…Electromagnetic bandgap (EBG) structures can help in the reduction of mutual coupling by their capabilities of suppressing surface wave's propagation in a specific frequency range. …”
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Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation by Yasuhisa Omura

“…It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. …”
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